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Characterization of Epitaxial Bi-Layer-Structured Bi5Ti3FeO15 (m = 4) and Bi4Ti3O12-Bi5Ti3FeO15 (m = 3-4) Natural-Superlattice-Structured Multiferroic Thin Films Prepared by Pulsed Laser deposition

Published online by Cambridge University Press:  01 February 2011

Seiji Nakashima ,
Yoshitaka Nakamura  and
Masanori Okuyama
Seiji Nakashima
Affiliation:
[email protected], Osaka University, Graduate school of Engineering Science, 1-3 Machikaneyama-cho, Toyonaka, 560-8531, Japan, +81-6-6850-6332, +81-6-6850-341
Yoshitaka Nakamura
Affiliation:
[email protected], Graduate school of Engineering Science, Osaka University, Division of Advanced Electronics and Optical Science, Department of Systems Innovation, 1-3 Machikaneyama-cho, Toyonaka, 560-8531, Japan
Masanori Okuyama
Affiliation:
[email protected], Graduate school of Engineering Science, Osaka University, Division of Advanced Electronics and Optical Science, Department of Systems Innovation, 1-3 Machikaneyama-cho, Toyonaka, 560-8531, Japan
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Abstract

Bi-layer-structured mutiferroic Bi5Ti3FeO15 (BTFO15) (m = 4) and natural-superlattice-structured Bi4Ti3O12- Bi5Ti3FeO15 (BIT-BTFO15) (m = 3-4) thin films have been prepared on (001) and (110) oriented SrTiO3 (STO) single crystal substrates by using pulsed laser deposition. X-ray diffraction patterns of these thin films on (00l) STO single crystals shows the obtained thin films were (00l)-oriented layer-perovskite single phase, and BIT-BTFO15 (m = 3-4) natural-superlattice-structure has also obtained. On (110) STO single crystal, layer perovskite (11l) oriented thin films have been also obtained. For characterizing ferroelectric properties, these thin films have been prepared on (001) and (110) oriented La-doped (3.73 wt%) STO single crystal substrates. From ferroelectric D-E hysteresis loops measurements, BTFO15 (m = 4) and BIT-BTFO (m = 3-4) thin films on (110) La-doped STO single crystals shows good ferroelectric hysteresis loops and their double remanent polarizations (2Pr) were 47 μC/cm2 and 44 μC/cm2, respectively. However, these thin films on (001) La-doped STO single crystals do not show ferroelectric characteristics.

Keywords

ferroelectricferroelectricitystructural
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1034 , 2007 , 1034-K01-05
Copyright
Copyright © Materials Research Society 2008

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References

1. Kimura, T., Goto, T., Shintani, H., Ishizaka, K., Arima, T. and Tokura, Y., Nature 426, 55 (2003)Google Scholar
2. Ikeda, N., Ohsumi, H., Ohwada, K., Ishii, K., Inami, T., Kakurai, K., Murakami, Y., Yoshii, K., Mori, S., Horibe, Y. and Kito, H., Nature 436, 1136 (2005)Google Scholar
3. Hill, N. A., J. Phys. Chem. B104 6694 (2000)Google Scholar
4. Yun, K. Y., Ricinschi, D., Kanashima, T., Noda, M., and Okuyama, M., Appl. Phys. Lett. 89, 192902 (2006)Google Scholar
5. Kubel, F. and Schmid, H., Acta Crystallogr. Sect. B 46 698 (1990)Google Scholar
6. Kiselev, S. V., Ozerov, R. P., and Zhdanov, G. S., Sov. Phys. Dokl. 7 742 (1963)Google Scholar
7. Azuma, M., Takata, K., Saito, T., Ishiwata, S., Shimakawa, Y. and Takano, M., J. Am. Chem. Soc. 127 8889 (2005)Google Scholar
8. Baetting, P. and Spaldin, N. A., Appl. Phys. Lett. 86 012505 (2005)Google Scholar
9. Morozov, M. I. and Gasarov, V. V., Inorg. Mater. 38 723 (2002)Google Scholar
10. Ismailzade, I. G., Nesterenko, V. I., Mirishli, F. A. and Rustamov, P. G., Sov. Phys. Crysrallogr. 12 400 (1967)Google Scholar
11. Srinvas, A., Kumar, M. Mahesh, Suryanarayana, S. V. and Bhimasankaram, T., Mat. Res. Bull. 34 989 (1999)Google Scholar
12. Srinvas, A., Kim, D-. W., Hong, K. S. and Suryanarayana, S. V., Mat. Res. Bull. 39 55 (2004)Google Scholar
13. Sresh, M. B., Ramana, E. Venkata, Babu, S. Narendra and Suryanarayana, S. V., Ferroelectrics 332 57 (2006)Google Scholar
14. Zhang, S.-T., Chen, Y.-F., Liu, Z.-G., Ming, N.-B., Wang, J. and Cheng, G.-X., J. Appl. Phys. 97 104106 (2005)Google Scholar
15. Nakashima, S., Nakamura, Y., Yun, K. Y. and Okuyama, M., Jpn. J. Appl. Phys. 46 6952 (2007)Google Scholar
16. Lee, H. N. and Hesse, D., Appl. Phys. Lett. 80 1040 (2000)Google Scholar
17. Garg, A., Barber, Z. H., Dawber, M., Scott, J. F., Snedden, A. and Lightfoot, P., Appl. Phys. Lett. 83 2414 (2003)Google Scholar
18. Garg, A., Snedden, A., Lightfoot, P., Scott, J. F., Hu, X. and Barber, Z. H., J. Appl. Phys. 96 3408 (2004)Google Scholar