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Characterization of Electron-Induced Defects in Cu (In, Ga) Se2 Thin-Film Solar Cells using Electroluminescence

Published online by Cambridge University Press:  21 August 2013

Shirou Kawakita
Affiliation:
Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki, 305-8505 Japan
Mitsuru Imaizumi
Affiliation:
Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki, 305-8505 Japan
Shogo Ishizuka
Affiliation:
Insititute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305-8568 Japan
Hajime Shibata
Affiliation:
Insititute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305-8568 Japan
Shigeru Niki
Affiliation:
Insititute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305-8568 Japan
Shuichi Okuda
Affiliation:
Osaka Prefecture University (OPU), Sakai, Osaka, 599-8570 Japan
Hiroaki Kusawake
Affiliation:
Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki, 305-8505 Japan
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Abstract

CIGS solar cells were irradiated with 250 keV electrons, which can create only Cu-related defects in the cell, to reveal the radiation defect. The EL image of CIGS solar cells before electron irradiation at 120 K described small grains, thought to be those of the CIGS. After 250 keV electron irradiation of the CIGS cell, the cell was uniformly illuminated compared to before the electron irradiation and the observed grains were unclear. In addition, the EL intensity rose with increasing electron fluence, meaning the change in EL efficiency may be attributable to the decreased likelihood of non-irradiative recombination in intrinsic defects due to electron-induced defects. Since the light soaking effect for CIGS solar cells is reported the same phenomena, the 250 keV electron radiation effects for CIGS solar cells might be equivalent to the effect.

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Articles
Copyright
Copyright © Materials Research Society 2013 

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References

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