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Characterization of Electron Cyclotron Resonance Plasma-Deposited Hydrogenated Amorphous Silicon and Related Alloy Films

Published online by Cambridge University Press:  21 February 2011

J. M. Essick ,
F. S. Pool ,
Y. H. Shing  and
M. J. Holboke
J. M. Essick
Affiliation:
Department of Physics, Occidental College, Los Angeles, CA 90041
F. S. Pool
Affiliation:
Department of Physics, Occidental College, Los Angeles, CA 90041
Y. H. Shing
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
M. J. Holboke
Affiliation:
Department of Physics, Occidental College, Los Angeles, CA 90041
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Abstract

We characterized a-Si:H films deposited by the electron cyclotron resonance (ECR) microwave plasma-enhanced CVD technique with the purpose of comparing ECR film quality widi that of films deposited by the rf plasma-enhanced CVD method. These ECR films were deposited in the 1–10 mT pressure region under a variety of growth conditions. Our investigations reveal the following typical properties for intrinsic ECR-deposited a-Si:H: (1) high photosensitivity as indicated by a light-to-dark DC conductivity ratio of up to 2×106, (2) a Tauc gap in the range of 1.75–1.85 eV, (3) an Urbach slope of 45–60 meV as determined by CPM and (4) an integrated deep defect density of 0.5–2×1016 cm-3 with Ec - Ef = 0.74–0.87 eV as determined by drive level profiling and junction capacitance vs. temperature scans. Variations of these quantities with deposition temperature, hydrogen dilution and magnetic field profile are discussed. Our results indicate that ECR-deposited a-Si:H is of comparable quality to a-Si:H deposited by the rf plasma glow discharge technique. ECR deposition conditions for a highly conductive type of a-Si:H film also are discussed. This material, while only slightly photosensitive and possessing an Urbach slope of over 100 meV, has a light DC conductivity of 3×10-4 (Ωcm)-1. Boron doping of this material produces a conductivity of 5×10-2 (Ωcm)-1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 679
Copyright
Copyright © Materials Research Society 1991

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References

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