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Characterization of Electrically Pulsed Chromium Disilicide Fusible Links

Published online by Cambridge University Press:  10 February 2011

A.G. Domenicucci ,
B. Cunningham  and
P. Tsang
A.G. Domenicucci
Affiliation:
IBM Microelectronics Division, 1580 Route 52, Hopewell Junction, New York 12533
B. Cunningham
Affiliation:
Dominion Semiconductor, 9600 Goodwin Drive, Manassas, Virginia 20110
P. Tsang
Affiliation:
Micrus Coporation 1580 Route 52, Hopewell Junction, New York 12533
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Abstract

Fusible links, fabricated from silicon rich chromium disilicide thin films, were subjected to voltage pulses in the 3–6 volt range. An optimum voltage existed at which the fuses blew. Transmission electron microscopy (TEM) was used to study the microstructural characteristics of the fuses both before and after the application of the voltage pulses. The TEM characterization, coupled with electrical and physical measurements, revealed that the mechanism underlying the fuse blow was hole current induced Si electromigration. Below the optimum voltage, the amount of Si transported was insufficient to cause fuse rupture. Above the optimum voltage, the current- voltage characteristics of the fuses became nonlinear and a unique sequence of material phases was formed. The composition of the phases suggests that both thermomigration and electromigration processes were operating at voltages above the optimum voltage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 523: Symposium U – Electron Microscopy of Semiconducting Materials & ULSI Devices , 1998 , 103
Copyright
Copyright © Materials Research Society 1998

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