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Characterization of Doped Si-TiSi2 Bilayers Formed by Ion Beam Mixing and Rapid Thermal Annealing

Published online by Cambridge University Press:  25 February 2011

K. Maex ,
R.F. de Keersmaecker  and
P.F.A. Alkemade
K. Maex
Affiliation:
ESAT Laboratory, Katholieke Universiteit Leuven, Belgium
R.F. de Keersmaecker
Affiliation:
ESAT Laboratory, Katholieke Universiteit Leuven, Belgium
P.F.A. Alkemade
Affiliation:
State University Utrecht, The Netherlands
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Abstract

The use of rapid thermal processing is reported for simultaneous formation of TiSi2 from Ti deposited layers and activation of As or Sb implanted profiles in Si. Properties of the silicide and the doped Si are reported with emphasis on impurity redistribution and defect removal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 153
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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