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Characterization of Dielectric Layers on Hydrogen Passivated Si Surfaces

Published online by Cambridge University Press:  28 February 2011

J. A. Gregory ,
C. E. Dubé ,
J. I. Hanoka  and
Z. Y. Vayman
J. A. Gregory
Affiliation:
Mobil Solar EnergyCorporation, 16 Hickory Drive, Waltham, Massachusetts 02254
C. E. Dubé
Affiliation:
Mobil Solar EnergyCorporation, 16 Hickory Drive, Waltham, Massachusetts 02254
J. I. Hanoka
Affiliation:
Mobil Solar EnergyCorporation, 16 Hickory Drive, Waltham, Massachusetts 02254
Z. Y. Vayman
Affiliation:
Mobil Solar EnergyCorporation, 16 Hickory Drive, Waltham, Massachusetts 02254
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Abstract

We have Investigated the layer formed on Si surfaces passivated by a Kaufman Ion source using mixtures of hydrogen and hydrocarbons. Chemical, optical, and electronic techniques were employed to characterize this layer and Its effect on passivation of defects in the Si. The evidence Indicates that the layer Is a dielectric and probably has the formula Six C(1-x) (H). It does not appear to Impede the passivation of polycrystalline Si, but it does affect the reflectivity of the Si material, and also the barrier height In Schottky junctions. We suggest that a similar layer may be formed during other hydrogen/hydrocarbon plasma treatments of SI.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 513
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Micheels, R.H., Vayman, Z., and Hanoka, J.I., Appl. Phys. Lett., 46(4), 414 (1985).CrossRefGoogle Scholar
2. Seager, C.H. and Ginley, D.S., Appl. Phys. Lett., 34(5), 337 (1979).CrossRefGoogle Scholar
3. Hanoka, J.I., Seager, C.H., Sharp, D.J., and Panitz, J.K.G., Appl. Phys. Lett. 42, 618 (1983).CrossRefGoogle Scholar
4. Meier, D.L., Rohatgi, A., Campbells, R.B. Alexander, P., Fonash, S.J., and Singh, R., 16th IEEE Photovoltaics Special ists Conference (IEEE: New York; 1984). p. 427.Google Scholar
5. Hanoka, J.I., DubS, C., and Sandstrom, D.B., in Microscopic Identification of Electronic Defects In Semiconductors, edited by Johnson, Noble M., Bishop, Stephen B., and Watkins, George D. (Materials Research Society: Pittsburgh; 1985), p. 553.Google Scholar
6. Wald, F.V., In: Crystals. Growth Properties and Applications 5, edited by Grabmaler, J. (Springer: Berlin; 1981)o p. 147.Google Scholar
7. Micheels, Ronald H. and Rauh, R. David, J. Electrochem. Soc., 131, 217 (1984).CrossRefGoogle Scholar
8. Handbook of Photoelectron Spectroscopy, edited by Wagner, C.D., Riggs, W.M., Davis, L.E., Moulder, J.F., Muilenberg, G.E. (Perkin-Elmer Corp.: Eden Pralrle, MN; 1979).Google Scholar
9. Coyle, George J. Jr., and Oehrlein, Gottlieb S., Appl. Phys. Lett., 47, 604 (1985).CrossRefGoogle Scholar
10. Mu, X.C. and Fonash, S.J., IEEE Elec. Dev. Lett., EDL–6, 410 (1985).CrossRefGoogle Scholar
11. Frieser, R.G., Montillo, F.J., Zingerman, N.B., Chu, W.K., and Mader, S.R., J. Electrochem. Soc., 13, 2237 (1983).CrossRefGoogle Scholar
12. Pang, S.W., Rathman, D.D., Silversmith, D.J., Mountain, R.W., and DeGraff, P.D., J. Appl. Phys., 54, 3272 (1983).CrossRefGoogle Scholar
13. Jellison, G.E., Jr. and Modine, F.A., J. Appl. Phys., 53, 3745 (1982).CrossRefGoogle Scholar
14. Brice, D.K., private communication.Google Scholar
15. Fonash, Stephen J., Ashok, S., and Singh, Ranbir, Appl. Phys. Lett., 39, 423 (1981).CrossRefGoogle Scholar
16. Aisenberg, S., J. Vac. Soc. Technol., A2, 369 (1984).CrossRefGoogle Scholar