Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-29T07:23:56.720Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Defect Structures in Lely 6H-SiC Single Crystals Using Synchrotron White Beam X-Ray Topography

Published online by Cambridge University Press:  15 February 2011

W. Huang ,
S. Wang ,
M. Dudley ,
P. Neudeck ,
J. A. Powell  and
C. Fazi
W. Huang
Affiliation:
Dept. of Materials Science and Engineering, SUNY at SB, Stony Brook, NY1 1794–2275
S. Wang
Affiliation:
Dept. of Materials Science and Engineering, SUNY at SB, Stony Brook, NY1 1794–2275
M. Dudley
Affiliation:
Dept. of Materials Science and Engineering, SUNY at SB, Stony Brook, NY1 1794–2275
P. Neudeck
Affiliation:
NASA Lewis Research Center, 21000 Brookpark Road, MS 77–1, Cleveland, Ohio 44135
J. A. Powell
Affiliation:
NASA Lewis Research Center, 21000 Brookpark Road, MS 77–1, Cleveland, Ohio 44135
C. Fazi
Affiliation:
U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783, USA
Get access

Abstract

Defect structures in Lely SiC single crystals have been studied using synchrotron white beam X-ray topography. Basal plane dislocations and stacking faults probably generated during post-growth cooling are clearly revealed. For both perfect dislocations and partial dislocations bounding the stacking faults, Burgers vectors and line directions are determined from contrast extinction analysis as well as projected direction analysis on different topographic images. The fault planes and fault vectors of the stacking faults were determined using contrast extinction analysis. Possible dislocation generation mechanisms are briefly discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 375: Symposia AA – Applications of Synchrotron Radiation Techniques to Materials Science , 1994 , 313
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Palmour, J. W., et al. in Amorphous and Crystalline Silicon Carbide IV, Springer Proceedings in Physics, Yang, C. Y., Rahman, M. M. and Harris, G. L., eds, 71, 66 (1992)Google Scholar
2. Wang, S., Dudley, M., et al. in Applications of Synchrotron Radiation Techniques to Materials Science, Perry, D. L., Shinn, N. D., Stockbauer, R. L., D'Amico, K. L., and Terminello, L. J. (Eds.), Mat. Res. Soc. Symp. Proc. 307, 249, 1993 Google Scholar
3. Dudley, M., Wang, S., et al., J. Phys. D: Appl. Phys. (accepted for publication)Google Scholar
4. Lely, J. A., Ber Deut. Keram. Ges., 28, 229 (1955)Google Scholar
5. Tanner, B. K., X-ray Diffraction Topography, Pergamonpress, (1976)Google Scholar
6. Hirth, J. P. and Lothe, J., Theory of Dislocations, New York: John Wiley, 1982 Google Scholar
7. Tsurekawa, S., Hasegawa, Y., et al., Materials Transactions, JIM, 34, 675 (1993)Google Scholar
8. Posen, H. and Bruce, J. A., Silicon Carbide, Proc. of the 3rd International Conference on Silicon Carbide, 238 (1973)Google Scholar
9. Amelinckx, S. and Strumane, G. and Webb, W. W., J. of Applied Physics, 31, 1359 (1960)Google Scholar
10. Maeda, K., etc., Philosophical Magazine A, 57, 573 (1988)Google Scholar
11. Tomita, T. and Yuasa, T., Proc. of the 6th International Conference on X-ray Optics and Microanalysis, Shinoda, G., Kohra, K. and Ichinokawa, T., eds, 685 (1971)Google Scholar
12. Klapper, H., J. Appl. Cryst. 9, 310 (1976)Google Scholar
13. Wang, S., Ph.D. Thesis, State University of New York at Stony Brook (1994)Google Scholar