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Characterization of Deep-Level Defects in Semi-Insulating GaAs and InP by Photoinduced Transient Spectroscopy (PITS)
Published online by Cambridge University Press: 25 February 2011
Abstract
Deep states in semi-insulating (SI) materials :GaAs:Cr ,un-doped GaAs and InP:Fe are investigated by Photoinduced Transient Spectroscopy (PITS) .The relationship between the Hall mobility in undoped SI GaAs and occurrence of the EL2-related peak in the PITS spectrum is shown.
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- Copyright © Materials Research Society 1990
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