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Characterization of Deep-Level Defects in Semi-Insulating GaAs and InP by Photoinduced Transient Spectroscopy (PITS)

Published online by Cambridge University Press:  25 February 2011

Pawel Kaminski
Pawel Kaminski*
Affiliation:
Institute of Electronic Materials Technology, ul.Konstruktorska 6, 02-673 Warsaw, Poland
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Abstract

Deep states in semi-insulating (SI) materials :GaAs:Cr ,un-doped GaAs and InP:Fe are investigated by Photoinduced Transient Spectroscopy (PITS) .The relationship between the Hall mobility in undoped SI GaAs and occurrence of the EL2-related peak in the PITS spectrum is shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 75
Copyright
Copyright © Materials Research Society 1990

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References

1 Look, D.C., in Semi conductors and Semimetals , edited by Willardson, R.K. and Beer, A.C. (Academic Press, New York, 1983), Vol.19, p.76 .Google Scholar
2 Martin, G.M., in Semi-Insulating III-V Materials : Nottingham 1980, edited by Rhees, G.J. (Shiva, Orpington UK, 1980), p.13.Google Scholar
3 Kaminski, P. and Thomas, H. ,in Defects in Crystals, edited by Mizera, E. (World Scientific, Singapore, 1988), p.438 .Google Scholar
4 Dobrilla, P., J. Appl . Phys. 64 , 6767 (1988)Google Scholar
5 Bourgoin, J.C. and von Bardeleben, H.J. , J.Appl.Phys. 64, R 65 (1988)Google Scholar
6 Walukiewicz, W., Lagowski, J. and Gatos, H.C. , Appl.Phys.Lett. 43 ,192 (1983)Google Scholar
7 Bishop, S.G., in Deep Centers in Semi conductors, edited by Pantelides, S.T. (Gordon and Breach, New York, 1985), p.541 .Google Scholar