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Characterization of CVD TixCyNz Films Deposited as Diffusion Barriers for Cu on Low-k Dielectrics Methylsilsequiazane

Published online by Cambridge University Press:  01 February 2011

W.C. Gau ,
P.T. Liu ,
T.C. Chang  and
L.J. Chen
W.C. Gau
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
P.T. Liu
Affiliation:
National Nano Devices Laboratories, Hsinchu, Taiwan, Republic of China
T.C. Chang
Affiliation:
Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
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Abstract

Metal organic chemical vapor deposition (MOCVD) TixCyNz films were deposited by using tetrakis-dimethylamino-titanium (TDMAT) and NH3 as a reaction gas at temperatures from 325 to 400°C with multi-layer Ar/NH3 plasma treatment. Effects of annealing and Ar/NH3 plasma treatment on the microstructure, composition, and electrical properties of TixCyNz films were studied. By multi-layers plasma treatment, the resistivity of TixCyNz barriers decreased from 960 to 548 νΔ–cm and the concentration of oxygen in barrier films are also decreased. The integration of the TixCyNz with low-k methylsilsesquiazane (MSZ) was investigated through Cu/CVD-TixCyNz/SiO2 and Cu/CVD-TixCyNz /MSZ capacitors after being annealed in furnace at temperatures from 500 to 800°C. With thermal annealing in N2 ambient for 30 min, Cu/CVD-TixCyNz/ MSZ structure remains metallurgically stable up to 700°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E10.6
Copyright
Copyright © Materials Research Society 2003

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References

1. Kroger, R. and Eizenberg, M., J. App. Phys. 91, 5149 (2002).Google Scholar
2. Ikeda, S., Palleau, J., Torres, J., Chenevier, B., Bourhila, N., Madar, R., Solid State Electronics 43, 1063 (1999).Google Scholar
3. Yun, J.Y. and Rhee, S.W., J. Vac. Sci. Technol. A 18, 2822 (2000).Google Scholar
4. Riedel, S., Schulz, S.E., Baumann, J., Rennau, M., Gessner, T., Microelectronic Engineering 55, 213 (2001).Google Scholar
5. Park, K.C., Kim, S.H., and Kim, K.B., J. Electrochem. Soc. 147, 2711 (2000).Google Scholar
6. Jeng, J.S. and Chen, J.S., J. Electrochem. Soc. 149, 455 (2002).Google Scholar
7. Sung, W.L. and Chiou, B.S., J. Electronic Materials 31, 472 (2002).Google Scholar
8. Zeng, Y.X., Russell, S.W., McKerrow, A.J., Chen, P.J., Alford, T.L., Thin Solid Films 360, 283 (2000).Google Scholar
9. Zeng, Y.X., Russell, S.W., McKerrow, A.J., Chen, P.J., Alford, T.L., J. Vac. Sci. Technol. B 18, 221 (2000).Google Scholar
10. Joseph, S., Eizenberg, M., Marcadal, C., Chen, L., J. Vac. Sci. Technol. B 20, 1471 (2002).Google Scholar