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Characterization of Buried-Nitride Silicon for Integrated Circuit Applications

Published online by Cambridge University Press:  25 February 2011

D. R. Myers ,
H. J. Stein ,
S. S. Tsao ,
G. W. Arnold ,
R. C. Hughes ,
W. M. Miller ,
R. V. Jones  and
A. K. Datye
D. R. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
H. J. Stein
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
S. S. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
G. W. Arnold
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
R. C. Hughes
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
W. M. Miller
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
R. V. Jones
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
A. K. Datye
Affiliation:
Dept. of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque, NM 87131
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Abstract

We have examined the microstructure and the transport properties of nitrogen-implanted silicon-on-insulator wafers, as well as the performance of integrated-circuit transistors fabricated in this material. The insulating regions were fabricated in silicon by the unpatterned implantation of 4×1017 /cm2, 300 keV nitrogen dimers followed by annealing at 1473 K for 5 hours. For these parameters, the buried nitrogen-implanted layer crystallized into α-silicon nitride, and contains ≈20% excess silicon in the form of silicon inclusions of 5–15 nm diameter. The surface silicon layers are characterized by low-mobility, p-type conduction. The buried dielectric has a resistivity of approximately 108 Ωcm. Functional p-channel, integrated circuit transistors have been fabricated in n-type epitaxial silicon grown over the buried-nitride wafers. These transistors devices are similar in performance to those fabricated in bulk silicon,(hole mobilities in inversion layers of 140 cm2/V-s), and demonstrate the suitability of the buried nitride process for integrated circuit applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 113
Copyright
Copyright © Materials Research Society 1987

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