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Characterization of Bias Sputtered Aluminum Film

Published online by Cambridge University Press:  25 February 2011

Y. Homma ,
K. Hinode  and
T. Terada
Y. Homma
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185
K. Hinode
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185
T. Terada
Affiliation:
Hitachi VLSI Engineering Co., Koganei, Tokyo 187
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Abstract

The characteristics of RF bias-sputtered Al films are clarified. A negative substrate bias voltage, VDC, produced by RF biasing, strongly influences not only the planarization effect but also film characteristics such as hillock and void growth, and Ar content.

Films deposited at VDc lower than -150 V. are significantly degraded due to the formation of two kinds of voids grown during annealing. One type is a blister-like voids, while the others are large and irregular. These are produced when Ar is released from the films during heat treatment. as evidenced by the fact that the amount of Ar released from the films rapidly increases when VDC is lower than -150 V.

Although biasing strongly effects Al films resulting in the formation of an almost complete (111) texture. the effect degrades as VDC exceeds -200 V. Thus, Al bias sputtering requires a high resputtering rate and a VDC higher than -150 V to achieve appropriate planarization with suitable film characteristics.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 265
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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