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Characterization of B and N Implanted Fused Silica
Published online by Cambridge University Press: 25 February 2011
Abstract
The implantation of B and N into fused silica can result in chemical incorporation into the glass with a consequent larger increase in refractive index than is possible due to volume compaction alone. B implantation produces anomalously large concentrations of oxygen-vacancy defects which aid in the establishment of B into a borosilicate layer. N implants can result in unreacted N accumulations in addition to N incorporated into a Si-oxynitride layer. The unreacted N can also be incorporated by implantation damage (e.g., Si, Ar, Kr)--before or after N implantation--which provides additional occupancy sites. These results are important with respect to the use of implantation-produced waveguides for optoelectronic devices.
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- Copyright © Materials Research Society 1990
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