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Characterization of Atomic Layer DepositedWNxCy Thin Film as a Diffusion Barrier for CopperMetallization

Published online by Cambridge University Press:  01 February 2011

Soo-Hyun Kim ,
Su Suk Oh ,
Hyun-Mi Kim ,
Dae-Hwan Kang ,
Ki-Bum Kim ,
Wei-Min Li ,
Suvi Haukka  and
Marko Tuominen
Soo-Hyun Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Su Suk Oh
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Hyun-Mi Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Dae-Hwan Kang
Affiliation:
Research Institute of Advanced Materials, Seoul National University, Seoul 151-742, Korea
Ki-Bum Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Wei-Min Li
Affiliation:
ASM Microchemisty Ltd., FIN-02631 Espoo, Finland
Suvi Haukka
Affiliation:
ASM Microchemisty Ltd., FIN-02631 Espoo, Finland
Marko Tuominen
Affiliation:
ASM Microchemisty Ltd., FIN-02631 Espoo, Finland
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Abstract

The film properties of WNxCy films deposited by atomic layer deposition (ALD) using WF6, NH3, and triethylboron source gases were characterized as diffusion barrier for Cu metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΔ-cm with a film density of 15.37 g/cm3. The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of approximately 48, 32, and 20 at.%, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC1-x and β-W2N with an equiaxed microstructure. The barrier property of this ALD-WNxCy film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700°C for 30 minutes while the sputter-deposited Ta (12 nm) and ALD-TiN (20 nm) fail at 650 and 600°C, respectively. It is thought that the superior diffusion barrier performance of ALD-WNxCyfilm is the consequence of both nanocrystalline equiaxed grain structure and the formation of high density film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E10.9
Copyright
Copyright © Materials Research Society 2003

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