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Characterization of Atomic Layer Deposited Ultrathin HfO2 Film as a Diffusion Barrier in Cu Metallization

Published online by Cambridge University Press:  01 February 2011

Prodyut Majumder ,
Rajesh Katamreddy  and
Christos G Takoudis
Prodyut Majumder
Affiliation:
[email protected], University of Illinois at Chicago, Department of Chemical Engineering, 810 S Clinton St, Chicago, IL, 60607, United States, 312-996-8373, 312-413-4700
Rajesh Katamreddy
Affiliation:
[email protected], University of Illinois at Chicago, Department of Chemical Engineering, 810 S Clinton St, Chicago, IL, 60607, United States
Christos G Takoudis
Affiliation:
[email protected], University of Illinois at Chicago, Department of Chemical Engineering, 810 S Clinton St, Chicago, IL, 60607, United States
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Abstract

Thermally stable, amorphous HfO2 thin films deposited using atomic layer deposition have been studied as a diffusion barrier between Cu and the Si substrate. 4 nm thick as-deposited HfO2 films deposited on Si are characterized with X-ray photoelectron spectroscopy. Cu/HfO2/<Si> samples are annealed at different temperatures, starting from 500 °C, in the presence of N2 atmosphere for 5 min and characterized using sheet resistance, X-ray diffraction and scanning electron microscopy. Ultrathin HfO2 films are found to be effective diffusion barrier between Cu and Si with a high failure temperature of about 750 °C.

Keywords

barrier layerCux-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B09-03
Copyright
Copyright © Materials Research Society 2007

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