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Characterization of an Ultra Thin Dense Hafnium Oxide Compact Layer with Electrochemical Impedance Spectroscopy for Dye-Sensitized Solar Cell Application

Published online by Cambridge University Press:  01 February 2011

Braden Bills ,
Mariyappan Shanmugam ,
Mahdi Farrokh Baroughi  and
David Galipeau
Braden Bills
Affiliation:
[email protected], South Dakota State University, Brookings, South Dakota, United States
Mariyappan Shanmugam
Affiliation:
[email protected], South Dakota State University, Brookings, South Dakota, United States
Mahdi Farrokh Baroughi
Affiliation:
[email protected], South Dakota State University, Brookings, South Dakota, United States
David Galipeau
Affiliation:
[email protected], South Dakota State University, Brookings, South Dakota, United States
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Abstract

The performance of dye-sensitized solar cells (DSSCs) is limited by the back-reaction of photogenerated electrons from the photoelectrode back into the electrolyte solution. An atomic layer deposited (ALD) hafnium oxide (HfO2) ultra thin, a few nanometers, compact layer was grown on the surface of the transparent conducting oxide (TCO) and its effects on the performance of DSSCs were studied with dark and illuminated current-voltage and electrochemical impedance spectroscopy (EIS) measurements. Further, the theory of electron recombination at the TCO/electrolyte interface was developed and used to explain the improved DSSC performance with an ALD HfO2 compact layer.

Keywords

atomic layer depositionphotovoltaicbarrier layer
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1260: Symposium T – Photovoltaics and Optoelectronics from Nanoparticles , 2010 , 1260-T10-36
Copyright
Copyright © Materials Research Society 2010

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