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Characterization of an Extended Reactive Noble-Metal/III-V Semiconductor Interface: Cu/GaAs(110)

Published online by Cambridge University Press:  26 February 2011

J. J. Joyce  and
J. H. Weaver
J. J. Joyce
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
J. H. Weaver
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
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Abstract

We examine the electronic structure of the Cu/GaAs(110) interface using high resolution synchrotron radiation photoelectron spectroscopy. Analysis of valence band and core level spectra indicate that a reactive, extended interface is formed when Cu is deposited on the cleaved GaAs(110) surface at room temperature. Arsenic 3d core level data show a single reacted component shifted 500 meV to lower binding energy while the Ga 3d core shows a reacted component shifted by 800 meV below the substrate position. Core level attenuation curves indicate preferential As outdiffusion with the As signal at 30% of initial intensity for 100 ML of Cu while the Ga intensity for the same coverage has dropped to 2% of initial intensity. Band bending results show two separate regions of interest with a secondary pinning position 775 meV below the CBM for n-type GaAs. Results are discussed in light of thermodynamic and electronegativity parameters as well as other transition and rare-earth metal GaAs interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 349
Copyright
Copyright © Materials Research Society 1986

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References

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