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Characterization of a Solid-Source Delivery System for Metal Organic Chemical Vapor Deposition by In-Situ Laser Reflectance

Published online by Cambridge University Press:  10 February 2011

C. Dubourdieu ,
G. Y. Kim ,
J. D. Meyer  and
B. Gallois
C. Dubourdieu
Affiliation:
Stevens Institute of Technology, Department of Materials Science and Engineering, Hoboken NJ 07030
G. Y. Kim
Affiliation:
Stevens Institute of Technology, Department of Materials Science and Engineering, Hoboken NJ 07030
J. D. Meyer
Affiliation:
Stevens Institute of Technology, Department of Materials Science and Engineering, Hoboken NJ 07030
B. Gallois
Affiliation:
Stevens Institute of Technology, Department of Materials Science and Engineering, Hoboken NJ 07030
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Abstract

Specular laser reflectance (He-Ne laser) has been used to monitor in-situ and in real time the growth rate and the index of refraction of oxide films during chemical vapor deposition. This technique has been implemented on an inverted vertical stagnation-flow reactor equipped with a solid-source delivery system. Yttria deposited on silicon has been chosen as a starting material to characterize the reactor and the precursor delivery system capabilities. The experimental reflectance curves have been fitted to a simple three-layer (gas/film/substrate) model allowing the determination of the growth rate and of the refractive index. The growth rate has been studied as a function of various key processing parameters: the source feeding rate, the powder packing density, the oxygen partial pressure and the total pressure. The change in reflectivity has also been recorded during pulsed-delivery growth. Nanometer-scale resolution is obtained which demonstrates that this method can be extended to the study of multilayer oxide structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 502: Symposium II – In Situ Process Diagnostics & Intelligent Materials Processing , 1997 , 89
Copyright
Copyright © Materials Research Society 1998

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References

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