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Characterization of 4H-SiC JFETs for Use in Analog Amplifiers Capable of 723K Operation

Published online by Cambridge University Press:  15 February 2011

J. B. Casady ,
D. C. Sheridan ,
W. C. Dillard  and
R. W. Johnson
J. B. Casady
Affiliation:
NASA Center for Commercial Development of Space, Electrical Engineering Department, 200 Broun Hall, Auburn University, AL 36849-5201
D. C. Sheridan
Affiliation:
NASA Center for Commercial Development of Space, Electrical Engineering Department, 200 Broun Hall, Auburn University, AL 36849-5201
W. C. Dillard
Affiliation:
NASA Center for Commercial Development of Space, Electrical Engineering Department, 200 Broun Hall, Auburn University, AL 36849-5201
R. W. Johnson
Affiliation:
NASA Center for Commercial Development of Space, Electrical Engineering Department, 200 Broun Hall, Auburn University, AL 36849-5201
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Abstract

Discrete, buried-gate 4H-SiC JFETs (W/L = 1 mm/5 μm) were packaged and characterized at temperatures ranging from 290 K to 773 K for use in a hybrid, 4H-SiC analog amplifier. A contaminated passivation oxide was found to limit high-temperature operation initially, but upon removal of the passivation layer the devices demonstrated stable operation to 773 K with adequate amplification (A v greater than 200 V/V) up to 673 K. From the 16 devices tested, a peak extrinsic saturated transconductance (gmsa ) of 27.1 mS/mm was measured at 308 K, corresponding to a channel mobility of 400 cm2/V.s, excluding significant series resistance effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 105
Copyright
Copyright © Materials Research Society 1996

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