Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-25T15:18:27.545Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization and Mapping of Crystal Defects in Silicon Carbide

Published online by Cambridge University Press:  15 March 2011

E. Emorhokpor ,
T. Kerr ,
I. Zwieback ,
W. Elkington ,
M. Dudley ,
T. Anderson  and
J. Chen
E. Emorhokpor
Affiliation:
II-VI, Inc. 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058, USA
T. Kerr
Affiliation:
II-VI, Inc. 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058, USA
I. Zwieback
Affiliation:
II-VI, Inc. 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058, USA
W. Elkington
Affiliation:
II-VI, Inc. 375 Saxonburg Blvd., Saxonburg, PA 16056, USA
T. Anderson
Affiliation:
II-VI, Inc. 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058, USA
J. Chen
Affiliation:
II-VI, Inc. 375 Saxonburg Blvd., Saxonburg, PA 16056, USA
Get access

Abstract

A method is presented for detecting, counting and mapping micropipes and dislocations in n+, undoped, and semi-insulating Silicon Carbide wafers. The technique is based on etching in molten Potassium Hydroxide (KOH), and it employs image processing that automatically detects etch pits, discriminates between micropipes and dislocations, and generate micropipe and dislocation density maps. We demonstrate a novel way of detecting and mapping dislocations and micropipes in semi-insulating SiC. This is achieved by combining a properly tuned etching technique that reliably produces well defined etch pits with image processing that enables quick and accurate analysis of the etch pit contrast. We show that the results of optical evaluation are close to those obtained using the Synchrotron White Beam X-Ray Topography (SWBXT) technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J5.19
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Huang, X. R., Dudley, M., Vetter, , Huang, W. M., Wang, W., S., & Carter, C. H. Jr (1999). Appl. Phys. Lett. 74, 353–355.Google Scholar
[2] Neudeck, P.G., Huang, W., Dudley, M.: IEEE Trans. Electron Devices 46 (1999), p. 478 Google Scholar
[3] Katsuno, M., Ohtani, N., Takahashi, J., Fujimoto, T., Yashiro, H. and Kanaya, M.: Jpn. J. Appl. Phys. 38 (1999) 4661.Google Scholar
[4] Elkington, T., Emorhokpor, E., Kerr, T., Chen, J., Essary, K., Golab, M., Hopkins, R.: Statistical Analysis of Micropipe Defect Distributions in Silicon Carbide Crystals, edited by Editors: Chyi, J., Pearton, S. J., Han, J., Baca, A. G., Chang, Wayne H., Materials Research Society Symposium Proceedings, Vol. 764, C3.29 Google Scholar
[5] Dudley, M., Wang, S., Huang, W., Carter, C. Jr., Tsvetkov, V.F. and Fazi, C.: J. Phys. D: Appl. Phys. 28 (1995), p. 96 Google Scholar
[6] Ha, S., Vetter, W. M., Dudley, M., Skowronski, M.: Mat. Sci. For. Vols. 389–393 (2002) pp. 443–446 Google Scholar