Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-28T09:42:53.036Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization and light emission properties of osmium silicides synthesized by low energy ion implantation

Published online by Cambridge University Press:  01 February 2011

Prakash R. Poudel ,
K. Hossain ,
J. Li ,
B. Gorman ,
A. Neogi ,
B. Rout ,
J. L. Duggan  and
F. D. McDaniel
Prakash R. Poudel
Affiliation:
[email protected], University of North Texas, Physics, 211 Avenue A, Denton, TX, 76203, United States, 940 565 3336, 954 565 2515
K. Hossain
Affiliation:
[email protected], University of North Texas, Physics, 211 Avenue A, Denton, TX, 76203, United States
J. Li
Affiliation:
[email protected], University of North Texas, Physics, 211 Avenue A, Denton, TX, 76203, United States
B. Gorman
Affiliation:
[email protected], University of North Texas, Material Science and Engineering, 3940 North ELM st, Denton, TX, 76207, United States
A. Neogi
Affiliation:
[email protected], University of North Texas, Physics, 211 Avenue A, Denton, TX, 76203, United States
B. Rout
Affiliation:
[email protected], University of North Texas, Physics, 211 Avenue A, Denton, TX, 76203, United States
J. L. Duggan
Affiliation:
[email protected], University of North Texas, Physics, 211 Avenue A, Denton, TX, 76203, United States
F. D. McDaniel
Affiliation:
[email protected], University of North Texas, Physics, 211 Avenue A, Denton, TX, 76203, United States
Get access

Abstract

Low energy (55 KeV) Osmium ( Os− ) negative ion beam was used to implant (5×1016 atoms/cm2 ) into p-type-Si (100). The implantation was performed with the ion source of a National Electrostatic Corp. 3 MV Tandem accelerator. The implanted sample was subsequently annealed at 650 °C in a gas mixture that was 4% H2 + 96% Ar. Rutherford Backscattering spectrometry (RBS) analysis with 1.5 MeV Alpha particles was used to monitor the precipitate formation. Photoluminescence (PL) measurements were also performed to study possible applications of silicides in light emission. Cross-sectional Scanning Electron Microscopy (X-SEM) was performed for topographic image of the implanted region. RBS along with PL measurements indicate that the presence of osmium silicide (Os2Si3) phase for light emission in the implanted region of the sample.

Keywords

annealingbarrier layerAr
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A07-11
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chen, L.J. Metal Silicides: An integral Part of Microelectronics, JOM, 57 N. 9(2005) 24 Google Scholar
2. Lange, H. Silicide Thin Films-Fabrication, Properties, and Application, Materials Research Society, Boston (1996), 307 Google Scholar
3. Christensen, N.E. Physicsl Review B, 42 (1990), 7148 Google Scholar
4. Lange, H., Solid-State and Integrated Circuit Technology (1998) 247, Proceedings of 1998 IEEEGoogle Scholar
5. Leong, D. Harry, M. Reeson, K. J. and Homewood, K. P. Nature (London), 387, 686(1997)Google Scholar
6. Chu, S. Hirohada, T. and Kan, H. Jpn. Journal of Applied physics, Part 2 41, L299 (2002).Google Scholar
7. Chen, L.J. Silicide Technology for Integrated Circuits, The institution of Engineering and Technology publishing, London, UK (2004)Google Scholar
8. Lourenco, M.A. Milosavljevic, M. G, Shao, Gwilliam, R.M. Homewood, K.P. Thin Solid Films, 504(2006) 36 Google Scholar
9. Lu, H.T. Chen, L.J. Chueh, Y.L. Chou, L.J. Journal of Applied physics, 93(2003) 1468 Google Scholar
10. Townsend, P.D. Chandler, P.J. Zhang, L. Optical effects of Ion Implantation, Cambridge University Press (1994)Google Scholar
11. Maeda, Yoshihito, Umezawa, Kenji, Hayashi, Yoshikazu, Miyake, Kiyoshi, Ohashi, Kenya, Thin Solid Films 381 (2001) 256 Google Scholar
12. Amir, F.Z. Cottier, R.J. Golding, T.D. Donner, W. Anibou, N. Stokes, D.W. Journal of Crystal Growth 294 (2006) 174–178 Google Scholar
13. Mitchell, L.J. Holland, O.W. Hossain, K, Smith Jerome, E.B. Duggan, L. and McDaniel, F.D. Nucl. Inst. and Meth., 241, (2005) 548.Google Scholar
14. Middleton, R. A Negative Ion Cookbook, HTML Version: M. Wiplich, <http://tvdg10.phy.bnl.gov/COOKBook, October 1989.Google Scholar
15. Biersack, J. P. and Haggmark, L. G. Nucl. Inst. and Meth., 174, (1980) 257. Recently updated, the package and its documentation are available at http://www.srim.org.Google Scholar
16. Mayer, M. Simnra user.s guide, <www.rzg.mpg.de/man.Google Scholar
17. Mayer, M. SIMNRA, in: Proceeding of the 15th International Conference on the Application of Accelerators in Research and Industry, Vol. 475, 1999, 541.Google Scholar
18. Adams, D.P. Vasile, M.J. Journal of Vacuum Science and Technology, B 24 (2006) 836 Google Scholar
19. Cheng, X Q, Zhu, H N, Wang, R S, J. Phys.: Condens. Matter 12 (2000) 9195 Google Scholar
20. Schellenberg, L. Braun, H.F. Muller, J. Journal of less common metals, Vol 144, 2 (1988) 341 Google Scholar
21. Migas, D.B. Miglio, L. Shaposhnikov, V.L. and Borisenko, V.E. Phys. Status Solidi B 231 (2002) (1), 171 Google Scholar