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Characterization and light emission properties of osmium silicides synthesized by low energy ion implantation

Published online by Cambridge University Press:  01 February 2011

Prakash R. Poudel ,
K. Hossain ,
J. Li ,
B. Gorman ,
A. Neogi ,
B. Rout ,
J. L. Duggan  and
F. D. McDaniel
Prakash R. Poudel
Affiliation:
[email protected], University of North Texas, Physics, 211 Avenue A, Denton, TX, 76203, United States, 940 565 3336, 954 565 2515
K. Hossain
Affiliation:
[email protected], University of North Texas, Physics, 211 Avenue A, Denton, TX, 76203, United States
J. Li
Affiliation:
[email protected], University of North Texas, Physics, 211 Avenue A, Denton, TX, 76203, United States
B. Gorman
Affiliation:
[email protected], University of North Texas, Material Science and Engineering, 3940 North ELM st, Denton, TX, 76207, United States
A. Neogi
Affiliation:
[email protected], University of North Texas, Physics, 211 Avenue A, Denton, TX, 76203, United States
B. Rout
Affiliation:
[email protected], University of North Texas, Physics, 211 Avenue A, Denton, TX, 76203, United States
J. L. Duggan
Affiliation:
[email protected], University of North Texas, Physics, 211 Avenue A, Denton, TX, 76203, United States
F. D. McDaniel
Affiliation:
[email protected], University of North Texas, Physics, 211 Avenue A, Denton, TX, 76203, United States
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Abstract

Low energy (55 KeV) Osmium ( Os− ) negative ion beam was used to implant (5×1016 atoms/cm2 ) into p-type-Si (100). The implantation was performed with the ion source of a National Electrostatic Corp. 3 MV Tandem accelerator. The implanted sample was subsequently annealed at 650 °C in a gas mixture that was 4% H2 + 96% Ar. Rutherford Backscattering spectrometry (RBS) analysis with 1.5 MeV Alpha particles was used to monitor the precipitate formation. Photoluminescence (PL) measurements were also performed to study possible applications of silicides in light emission. Cross-sectional Scanning Electron Microscopy (X-SEM) was performed for topographic image of the implanted region. RBS along with PL measurements indicate that the presence of osmium silicide (Os2Si3) phase for light emission in the implanted region of the sample.

Keywords

annealingbarrier layerAr
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A07-11
Copyright
Copyright © Materials Research Society 2008

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