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Characterization and Evolution of Microstructures Formed by High Dose Oxygen Implantation of silicont

Published online by Cambridge University Press:  28 February 2011

M. K. El-Ghor ,
S. J. Pennycook ,
T. P. Sjoreen  and
J. Narayan
M. K. El-Ghor
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
T. P. Sjoreen
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
J. Narayan
Affiliation:
North Carolina State University, Raleigh, NC 27650
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Abstract

High doses of oxygen were implanted in silicon to produce stoichiometric buried oxide structures. Microstructural analysis was performed using transmission electron microscopy, electron energy loss spectroscopy, and Rutherford backscattering/channeling techniques. Cavities were observed in the top silicon layers of the as-implanted samples in two forms: spherical cavities (30–300 Å in diameter) in the first 1000 Å below the surface, followed by a 500 Å wide lamellar array of elongated cavities. A post implantation annealing was carried out at temperatures between 1150°C and 1250°C for 3 h during which the cavities became faceted and a denuded zone of 400 Å was formed. However, with a 1300°C anneal the cavities disappeared and the density of the two prominent types of defects, namely precipitates (mostly amorphous, but occasionally crystalline) and dislocations, decreased significantly. The silicon-oxide interface became increasingly planar. Possible mechanisms of annealing of the cavities, the precipitates, and the associated planarization of the interface are proposed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 591
Copyright
Copyright © Materials Research Society 1987

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