Hostname: page-component-7bb8b95d7b-pwrkn Total loading time: 0 Render date: 2024-10-06T17:33:19.679Z Has data issue: false hasContentIssue false
  • English
  • Français

Characteristics of Surface-Emitting Cold Cathode Based on Porous Polysilicon

Published online by Cambridge University Press:  10 February 2011

Takuya Komoda ,
Xia Sheng  and
Nobuyoshi Koshida
Takuya Komoda
Affiliation:
Matsushita Electric Works, Ltd. Advanced Technology Research Laboratory, Osaka, 571-8686, JAPAN
Xia Sheng
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo, 184, JAPAN
Nobuyoshi Koshida
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo, 184, JAPAN
Get access

Abstract

It is demonstrated that porous polysilicon (PPS) diode fabricated on the silicon substrate operates as efficient and stable surface-emitting cold cathode. A 1.5 pm of non-doped polysilicon layer is formed on n-type (100) silicon wafer and anodised in a solution of HF(50%): ethanol = 1:1 at a current density of 10 mA/cm2 for 30 seconds under illumination by a 500W tungsten lamp from a distance of 20 cm. Subsequently, PPS layer is oxidized in a rapid thermal oxidation(RTO) furnace for one hour at a temperature of 700°C. A semi-transparent thin Au film (about 10 nm thick) is deposited onto the PPS layer as a positive electrode and an ohmic contact is formed at the back of the silicon wafer as a negative electrode. When a positive bias is applied to the Au electrode in vacuum, the diode uniformly emits electrons. No electron emission is observed in the negatively biased region. Emission current is about 10−4 A/cm2 at 20V bias, and no fluctuation of emission current is observed as a function of time. Emission current is not affected by a surrounding pressure up to around 10 Pa. It is envisaged that mechanism of this emission is attributed to hot electron tunnelling.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 509: Symposium C – Materials Issues in Vacuum Microelectronics , 1998 , 187
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Canham, L T, Appl Phys Lett, 57, 1046 (1990).Google Scholar
[2] Koshida, N and Koyama, H, Jpn J Appl Phys, 30, L1221 (1991)Google Scholar
[3] Koyama, H, Oguno, T and Koshida, N, Appl Phys Lett, 62, 3177 (1993).Google Scholar
[4] Komoda, T, Kelly, J P, Cristiano, F, Nejim, A, Hemment, P L F, Homewood, K P, Gwillam, R., Mynard, J E and Sealy, B J: Nucl Instr Method, B 96, 387 (1995).Google Scholar
[5] Komoda, T, Kelly, J P, Nejim, A, Homewood, K P, Hemment, P L F and Sealy, B J, Mat Res Soc Symp Proc, 358, 163 (1995).Google Scholar
[6] Koshida, N and Koyama, H, Appl Phys Lett, 60, 347 (1992)Google Scholar
[7] Yue, W K, Parker, D L and Weichold, M H, IEDM'90, 167 (1990)Google Scholar
[8] Koshida, N, Ozaki, T, Sheng, X and Koyama, H, Jpn J Appl Phys, 34, L705 (1995)Google Scholar
[9] Sheng, X, Koyama, H, koshida, N, Iwasaki, S, Negishi, N, Chuman, T, Yoshikawa, T and Ogasawara, K, J Vac Sci Technol, B 15(5), 1 (1997)Google Scholar
[10] Spindt, C A, J Appl Phys, 39, 3504 (1968).Google Scholar
[11] Spindt, C A, Holland, C E, Rosengreen, A, and Brodie, I, J Vac Sci Technol, B 11, 468 (1993).Google Scholar
[12] Yokoo, K, Tanaka, H, Sato, S, Murota, J and Ono, S, J Vac Sci Technol, B 11, 429 (1993).Google Scholar
[13] Suzuki, M and Kusunoki, T, IDW'96, 529(1996)Google Scholar
[14] Geis, M W, Twichell, J C and Lyszczarz, T M, J Vac Sci Tech, B 14 (3), 2060 (1996)Google Scholar
[15] Hirano, T, Kanemaru, S, Tanoue, H and Itoh, J, Jpn J Appl Phys, 35, 6637 (1996)Google Scholar
[16] Sedlacik, R, Karel, F, Oswald, J, Fejfar, A, Pelant, I, and Kock, J, Thin Solid Films, 255, 269 (1993).Google Scholar