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Characteristics of Si-Sb-Te Films for Phase Change Memory

Published online by Cambridge University Press:  01 February 2011

Jie Feng ,
Yin ZHANG ,
Baowei Qiao ,
Yanfei Cai ,
Yinyin Lin ,
Tingao Tang ,
Bingchu Cai  and
Bomy Chen
Jie Feng
Affiliation:
[email protected], Shanghai Jiao Tong University, Key lab. for thin film and microfabrication of Ministry of Education, Inst. of Micro/Nano Sci.& Tech, 1954 Huasan Road, Shanghai, N/A, 200030, China, People's Republic of, 86-21-62823631
Yin ZHANG
Affiliation:
[email protected], Shanghai Jiao Tong University, Key lab. for thin film and microfabrication of Ministry of Education, Inst. of Micro/Nano Sci.& Tech, 1954 Huasan Road, Shanghai, N/A, 200030, China, People's Republic of
Baowei Qiao
Affiliation:
[email protected], Shanghai Jiao Tong University, Key lab. for thin film and microfabrication of Ministry of Education, Inst. of Micro/Nano Sci.& Tech, 1954 Huasan Road, Shanghai, N/A, 200030, China, People's Republic of
Yanfei Cai
Affiliation:
[email protected], Fudan University, State Key Laboratory of ASIC £¦ System, Shanghai, N/A, 200433, China, People's Republic of
Yinyin Lin
Affiliation:
[email protected], Fudan University, State Key Laboratory of ASIC £¦ System, Shanghai, N/A, 200433, China, People's Republic of
Tingao Tang
Affiliation:
[email protected], Fudan University, State Key Laboratory of ASIC £¦ System, Shanghai, N/A, 200433, China, People's Republic of
Bingchu Cai
Affiliation:
[email protected], Shanghai Jiao Tong University, Key lab. for thin film and microfabrication of Ministry of Education, Inst. of Micro/Nano Sci.& Tech, 1954 Huasan Road, Shanghai, N/A, 200030, China, People's Republic of
Bomy Chen
Affiliation:
[email protected], Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, United States
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Abstract

The novel phase change materials Si-Sb-Te films were prepared. The crystallization temperature of films increases with the increasing of Si concentration. Phase separation was observed in the Si-Sb-Te films, the dominant phase is Sb2Te3. The melting temperature of Si-Sb-Te decreased to ~550°C lower than 640°C of Ge2Sb2Te5. The decrease of film thickness of Si-Sb-Te films is less than 2% after annealing at 400°C, which is less than ~7% of the film thickness change of Ge2Sb2Te5 film. The crystalline resistivity of Si-Sb-Te films increased and the ratio of amorphous/crystalline resistivity of Si-Sb-Te films increased also comparing with Ge2Sb2Te5 film, which is benefit to reduce the writing current and keep higher on/off ratio of phase change memory. Reversible switch was performed in the devices with Si-Sb-Te films. The device with Si14.3Sb28.6Te57.2 film can be programmed with a 100 ns SET pulse and a 20 ns RESET pulse. The Reset current is only 1.37mA for a 10μm-sized device.

Keywords

phase transformationfilmdevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 918: Symposium H – Chalcogenide Alloys for Reconfigurable Electronics , 2006 , 0918-H08-04
Copyright
Copyright © Materials Research Society 2006

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References

1. Lai, S., Lowrey, T., IEDM Tech. Dig. (2001) 803.Google Scholar
2. Lai, S., IEDM Tech. Dig. (2003) 255.Google Scholar
3. Pirovano, A., Lacaita, A. L., Benvenuti, A., et al. IEDM Tech. Dig. (2003) 699.Google Scholar
4. Ha, Y. H., Yi, J. H., Horii, H., et al. Symposium on VLSI Tech. Dig. (2003) 175.Google Scholar
5. Hwang, Y. N., Lee, S. H., Ahn, S. J., et al. IEDM Tech. Dig. (2003) 893.Google Scholar
6. Qiao, Baowei, Feng, Jie, Lai, Yunfeng, et al. Applied Surface Science, (2005) in press.Google Scholar
7. Pirovano, A., Redaelli, A., Pellizzer, F., et al. IEEE Trans. on Device and Materials Reliability 4 (2004) 422 Google Scholar