Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-05T10:30:29.448Z Has data issue: false hasContentIssue false
  • English
  • Français

Characteristics of polarization emission in a-plane GaN-based multiple quantum wells structures

Published online by Cambridge University Press:  13 June 2012

Chiao-Yun Chang ,
Huei-Min Huang ,
Tien-Chang Lu ,
Hao-Chung Kuo ,
Shing-Chung Wang  and
Chih Ming Lai
Chiao-Yun Chang
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Huei-Min Huang
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Tien-Chang Lu
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Hao-Chung Kuo
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Shing-Chung Wang
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Chih Ming Lai
Affiliation:
Department of Electronic Engineering, Ming Chuan University, 250 Zhong Shan N. Rd., Sec. 5, Taipei 111, Taiwan
Get access

Abstract

We studied the polarization-dependent photoluminescence (PL) of a-plane GaN /AlGaN multiple quantum wells (MQWs) grown on r-plane sapphire substrate with the various well width from 1.5 to 7.33 nm. To clarify the reasons of light emission polarization properties, we applied the 6×6 k‧p model to simulate the E-k dispersion relation and the wave functions to obtain the polarization optical transitions. According to the experimental result, the PL emission peak position exhibits a red-shifted with increasing well width, due to the reduction of the quantum confinement effect. The polarization ratio of a-plane GaN/AlGaN MQWs increased from 0.236 to 0.274 with increasing the quantum well width. This phenomenon is believed to be that y-polarized light emission gradually dominates the PL spectrum and thus enhances the polarization ratio.

Keywords

III-Vphotoemissionnitride
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1432: Symposium G – “Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II” , 2012 , mrss12-1432-g04-04
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Allerman, A., et al. ., "Growth and design of deep-UV (240-290 nm) light emitting diodes using AlGaN alloys," Journal of crystal growth, vol. 272, pp. 227–241, 2004.Google Scholar
[2] Chow, W., et al. ., "Influence of quantum-well-barrier composition on gain and threshold current in AlGaN lasers," Applied Physics Letters, vol. 90, pp. 101116–101116–3, 2007.Google Scholar
[3] Leroux, M., et al. ., "Quantum confined Stark effect due to built-in internal polarization fields in (Al, Ga)N/GaN quantum wells," Physical Review B, vol. 58, pp. R13371–R13374, 1998.Google Scholar
[4] Waltereit, P., et al. ., "Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes," Nature, vol. 406, pp. 865–868, 2000.Google Scholar
[5] Schulz, S., et al. ., "Electronic and optical properties of nonpolar a-plane GaN quantum wells," Physical Review B, vol. 82, p. 125318, 2010.Google Scholar
[6] Badcock, T., et al. ., "Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates," Journal of Applied Physics, vol. 105, pp. 123112–123112–6, 2009.Google Scholar
[7] Yamaguchi, A. A., "Polarization properties in deep-ultraviolet AlGaN quantum wells with various substrate orientations," Physica Status Solidi B-Basic Solid State Physics, vol. 247, pp. 1717–1721, Jul 2010.Google Scholar
[8] Chuang, S. L. and Chang, C. S., "k⋅p method for strained wurtzite semiconductors," Physical Review B, vol. 54, pp. 2491–2504, 1996.Google Scholar
[9] Huang, H. H. and Wu, Y. R., "Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes," Journal of Applied Physics, vol. 106, pp. 023106–023106–6, 2009.Google Scholar
[10] Craven, M., et al. ., "Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells," Applied Physics Letters, vol. 84, p. 496, 2004.Google Scholar
[11] Friel, I., et al. ., "Investigation of excitons in AlGaN/GaN multiple quantum wells by lateral photocurrent and photoluminescence spectroscopies," Journal of Applied Physics, vol. 95, p. 3495, 2004.Google Scholar
[12] Pokatilov, E., et al. ., "Excitons in wurtzite AlGaN∕ GaN quantum-well heterostructures," Physical Review B, vol. 77, p. 125328, 2008.Google Scholar