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Characteristics of Piezoelectric Ceramics at High Vibration Levels

Published online by Cambridge University Press:  15 February 2011

S. Takahashi
Affiliation:
R&D Group, NEC Corporation, Kawasaki-shi 216-8555, Japan, [email protected]
Y. Sasaki
Affiliation:
R&D Group, NEC Corporation, Kawasaki-shi 216-8555, Japan, [email protected]
M. Umeda
Affiliation:
Electronics Div, Niigata Polytechnic College, Shibata-shi 957-0017, Japan
K. Nakamura
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama-shi 226-8503, Japan
S. Ueha
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama-shi 226-8503, Japan
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Abstract

New piezoelectric power devices -such as ultrasonic motors, piezoelectric actuators and piezoelectric transformers- have been studied intensively in recent years. The piezoelectric ceramics in these devices are often subjected to a high level of vibration, and the electromechanical characteristics of piezoelectric ceramics at high vibration levels vary when changes in vibration level are accompanied by changes in temperature. The effects of temperature and of vibration level on specific electromechanical characteristics of typical piezoelectric ceramics were therefore separated by using two measurement methods: the continuous-voltage-wave method, which results in an increased temperature; and the burst-voltage-wave method, which does not. The elastic, dielectric and piezoelectric constants were found to be sensitive to temperature but comparatively insensitive to vibration level. Mechanical loss, however, was found to be a function of both temperature and vibration level.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

1 Zhang, Q. M., Pan, W. Y., Jang, S. J. and Cross, L. E., J. Appl. Phys. 64, p. 6445 (1988).10.1063/1.342059Google Scholar
2 Damjanovic, D., J. Appl. Phys. 82, p. 1788 (1997).10.1063/1.365981Google Scholar
3 Takahashi, S., Hirose, S. and Uchino, K., J. Am. Ceram. Soc. 77, p. 2429 (1994).10.1111/j.1151-2916.1994.tb04615.xGoogle Scholar
4 Takahashi, S., Yamamoto, M. and Sasaki, Y., Jpn. J. Appl. Phys. 37, p. 5292 (1998).10.1143/JJAP.37.5292Google Scholar
5 Hirose, S. and Takahashi, S., Trans. Inst. Electron. Inf. & Commun. Eng. J80–A, p. 1621 (1997). [in Japanese]Google Scholar
6 Takahashi, S. and Hirose, S., Jpn. J. Appl. Phys. 31, p. 3055 (1992).10.1143/JJAP.31.3055Google Scholar
7 Takahashi, S. and Hirose, S., Jpn. J. Appl. Phys. 32, p. 2422 (1993).10.1143/JJAP.32.2422Google Scholar
8 Takahashi, S., Hirose, S., Uchino, K. and Oh, K. Y., ISAF '94 Proc. 9th IEEE (Penn State, PA 1994), p. 377.Google Scholar
9 Takahashi, S., Sasaki, Y., Hirose, S. and Uchino, K., Mater. Res. Proc. 360, p. 305 (1995).10.1557/PROC-360-305Google Scholar
10 Takahashi, S., Sasaki, Y., Hirose, S. and Uchino, K., Jpn. J. Appl. Phys. 34, p. 5328 (1995).10.1143/JJAP.34.5328Google Scholar
11 Takahashi, S., Sasaki, Y., Kawai, H. and Hirose, S., ISAF '96 Proc. 10th IEEE (New Branswick, NJ 1996), p. 309.Google Scholar
12 Kawai, H., Sasaki, Y., Inoue, T., Inoi, T. and Takahashi, S., Jpn. J. Appl. Phys. 35, p. 5015 (1996).10.1143/JJAP.35.5015Google Scholar
13 Takahashi, S., Sasaki, Y. and Hirose, S., Jpn. J. Appl. Phys. 36, p. 3010 (1997).10.1143/JJAP.36.3010Google Scholar
14 Umeda, M., Nakamura, K. and Ueha, S., Jpn. J. Appl. Phys. 37, p. 5322 (1998).10.1143/JJAP.37.5322Google Scholar
15 Umeda, M., Takahashi, S., Sasaki, Y., Nakamura, K. and Ueha, S., Trans. Inst. Electron. Inf. & Commun. Eng. J82–C–I, (1999). (in press)Google Scholar