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Characteristics of Molybdenum Nitride Thin Film by N2+ Ion Implantation

Published online by Cambridge University Press:  10 February 2011

Dong Joon Kim ,
Ik-Soo Kim ,
Yong Tae Kim  and
Jong-Wan Park
Dong Joon Kim
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul, Korea Dept. of Metallurgical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-ku, Seoul, 133–791, Korea
Ik-Soo Kim
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul, Korea
Yong Tae Kim
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul, Korea
Jong-Wan Park
Affiliation:
Dept. of Metallurgical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-ku, Seoul, 133–791, Korea
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Abstract

Molybdenum nitride thin films were prepared by N2+ implantation with acceleration energy of 20 keV and the ion dose of 3×1017 ions/cm2. The structural property and thermal stability of the films were investigated by XRD, AES, AFM and RBS. The crystal structure of N2+ implanted molybdenum thin films (Mo-N2+) which had microcrystalline state was transformed to γ-Mo2N phase with a preferred (111) orientation after a post-annealing at 500 °C for 30min. However, a silicide reaction was not observed even after the annealing at 700 °C, which is due to the modification of the interface between Mo thin film and Si substrate by N2+ implantation. Also, Cu diffusion did not seem to be induced by the annealing at 700 °C for 30 min. The internal stress of the Mo-N2+ thin films during post-annealing at 600 °C for 30min was found to change from highly compressive stress to low tensile stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 563: Symposium M – Materials Reliability in Microelectronics IX , 1999 , 45
Copyright
Copyright © Materials Research Society 1999

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