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Characteristics of Mocvd-Grown AlGaAs/GaAs Sqw Lasers and GaAs Mesfetsfabrication on Si Substrate with SiO2-Back Coating

Published online by Cambridge University Press:  28 February 2011

Takashi Egawa ,
Hitoshi Tada ,
Yasufumi Kobayashi ,
Shinji Nozaki ,
Tetsuo Soga ,
Takashi Jimbo  and
Masayoshi Umeno
Takashi Egawa
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, JAPAN
Hitoshi Tada
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, JAPAN
Yasufumi Kobayashi
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, JAPAN
Shinji Nozaki
Affiliation:
Intel Corporation, Santa Clara, CA 95052
Tetsuo Soga
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, JAPAN
Takashi Jimbo
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, JAPAN
Masayoshi Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, JAPAN
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Abstract

We discuss room temperature CW operation of AlGaAs/GaAs SQW lasers and GaAs MESFETs with good pinch-off characteristic on SiO2 -back coated Si. The all-MOCVD-grown,SQW laser on Si with thermal-cycle annealing, which has the EPD of 1.5 × 107 cm−2, has the threshold current as low as 55 mA (1.41 kA/cm2) under CW operation at room temperature. The pinch-off and the sidegating effect characteristics of GaAs MESFETs on Si have been improved by using SiO2-back coating of Si and higher growth temperature. The maximum transconductance of 160 mS/mm has been obtained for the MESFET with a 2.5 × 15 µm gate. The main origin of sidegating effect associates with the channel layer-undoped GaAs layer beneath it interface. The SiO2 -back coating is found effective to obtain a lower background electron concentration in undoped GaAs layer and to control doping of the active layer in GaAs/Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 141
Copyright
Copyright © Materials Research Society 1990

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References

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