Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-29T09:36:46.019Z Has data issue: false hasContentIssue false
  • English
  • Français

Characteristics of low-k and ultralow-k PECVD deposited SiCOH films.

Published online by Cambridge University Press:  01 February 2011

A. Grill ,
V. Patel ,
K.P. Rodbell ,
E. Huang ,
S. Christiansen  and
M. R. Baklanov
A. Grill
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York, USA
V. Patel
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York, USA
K.P. Rodbell
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York, USA
E. Huang
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York, USA
S. Christiansen
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York, USA
M. R. Baklanov
Affiliation:
XPEQT at IMEC, Leuven, Belgium
Get access

Abstract

We have shown previously that the dielectric constants of PECVD prepared SiCOH dielectrics can be extended to ultralow-k values of k=2.0. The reduction in the dielectric constants has been achieved by adding an organic precursor to the tetramethylcyclotetrasiloxane (TMCTS) used for the preparation of the SiCOH dielectric and annealing the films to remove the thermally less-stable organic CHx fractions from the films, thereby adding porosity and reducing the density of the films. To assess the effects of the reduction of the dielectric constant on other physical properties of the material, the density and composition of the films have been determined by RBS and FRES and the porosity has been measured by PAS/PALS, SAXS and ellipsometric porosimetry. In addition the films have been characterized structurally and topologically by TEM and AFM.

It has been found that addition of the organic precursor reduces the Si fraction in the films, however, there is no direct correlation between dielectric constant and film composition. The dielectric constant and density decrease with increasing porosity in the films, which reaches values of 30-39% for k values of 2.05. The pore size increases with decreasing k, however the diameter remains below 5 nm for k=2.05. This is significantly smaller than the pore size typically found in porous spin-on films and may provide an integration advantage compared to spin-on films having similar k values.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B12.3
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1) 2001 International Technology Roadmap for Semiconductors, Interconnects.Google Scholar
2) Grill, A., Perraud, L., Patel, V., Jahnes, C., and Cohen, S., Mat. Res. Soc. Symp.Proc., 565, 107 (1999); A. Grill, C. Jahnes, V. Patel, and L. Perraud, U.S. 6,147,009 (2000).Google Scholar
3) Grill, A. and Patel, V., Appl. Phys. Lett., 79(6) (2001) 803.Google Scholar
4) Grill, A., Edelstein, D. and Patel, V., Advanced Metallization Conference 2001, Montreal. Canada, October 9-11, 2001.Google Scholar
5) Grill, A. and Patel, V., Mat. Res. Soc. Symp. Proc., 612, D2.9 (2000).Google Scholar
6) Petkov, M.P., Weber, M.H., Lynn, K.G. and Rodbell, K.P., Applied Physics Letters, 77 (16), 2470 (2000).Google Scholar
7) Baklanov, M. R., Mogilnikov, K. P., Polovinkin, V.G. and Dultsev, F.N., J.Vac.Sci.Technol.B, 18B, 1385 (2000).Google Scholar
8) Huang, E., Toney, M., Lurio, L. B., Volksen, W., Mecerreyes, D., Brock, P., Hawker, C. J., Hedrick, J. L., Lee, V., Magbitang, T., Miller, R. D., Applied Physics Letters, Submitted.Google Scholar
9) Purushotaman, S., Nitta, S. V., Ryan, J. G., Narayan, C., Krishnan, M., Cohen, S., Gates, S., Whitehair, S., Hedrick, J., Tyberg, C., Greco, S., Rodbell, K., Huang, E., Dalton, T., DellaGuardia, R., Saenger, K., Simonyi, E., Chen, S.-T., Malonne, K., Miller, R. and Volksen, W., IEDM 2001, 529 Google Scholar