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Characteristics of Laser/Energy Beam-Melted Silicon Mechanical Damages

Published online by Cambridge University Press:  26 February 2011

El-Hang Lee
El-Hang Lee*
Affiliation:
Monsanto Electronic Materials Co., St. Peters, MO 63376
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Abstract

We describe what appears to be a first attempt to melt and recrystallize macroscopic (10-20 μm deep) silicon mechanical damage that is induced from wafer modification such as slicing and lapping. Recrystallized surfaces appear mirror shiny, with significantly improved surface smoothness, as compared to the coarse texture of damaged surfaces. The crystallinity also appears good in general. Through the depth of melt were observed indications of impurity migration, probably caused by accumulated segregation at the advancing solid-liquid interface. Recrystallized surfaces, despite their smoothness, remain topologically uneven as a result of lateral mass transport. In addition, the extensive heat required to melt thick layers of silicon causes slip dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 155
Copyright
Copyright © Materials Research Society 1985

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References

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