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Characteristics of Interpoly Oxides Optimized by Conventional Processing and Laser Annealing

Published online by Cambridge University Press:  15 February 2011

G.E.J. Eggermont ,
H.D. Rodeen  and
D.L. Brors
G.E.J. Eggermont
Affiliation:
Philips Research Laboratories Sunnyvale Signetics Corp., 811 E. Arques Ave., Sunnyvale, CA. 94086, USA
H.D. Rodeen
Affiliation:
Signetics Corp., 811 E., Arques Ave., Sunnyvale, CA. 94086, USA
D.L. Brors
Affiliation:
Signetics Corp., 811 E., Arques Ave., Sunnyvale, CA. 94086, USA
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Abstract

To improve the dielectric properties of thin oxides grown on polysilicon, a matrix of conventional process variables such as phosphorus doping level and oxide growth temperature, and the inclusion of laser recrystallization of the polysilicon have been investigated. For conventionally processed wafers, highest dielectric strengths were obtained at the highest oxidation temperature (1150°C) and a simultaneous low doping level in the polysilicon. Similarly high dielectric strengths were obtained after cw-Ar laser recrystallization of the polysilicon at much lower temperatures (900°C), independent of the doping level in the polysilicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 591
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. DiMaria, D.J., Kerr, D.R., Appl. Phys. Lett. 27, 507 (1975).CrossRefGoogle Scholar
2. Anderson, R.M., Kerr, D.R., J. Appl. Phys. 48, 4834 (1977).Google Scholar
3. Yaron, G., Hess, L.D., Appl. Phys. Lett. 36, 284 (1980).Google Scholar
4. Irene, E.A., Tierney, E., Blum, J.M., Aliotta, C.F., Lamberti, A.C., Ginsberg, B.J., J. Electrochem. Soc. 128, 1971 (1981).Google Scholar
5. Fairfield, J.M., Masters, B.J., J. Appl. Phys. 38, 3148 (1967).Google Scholar