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Characteristics of Different Thickness a-Si:H/Metal Schottky Barrier Cell Structures-Results and Analysis

Published online by Cambridge University Press:  15 February 2011

Zhou Lu ,
Lihong Jiao ,
Randy Koval ,
Robert W. Collins  and
Christopher R. Wronski
Zhou Lu
Affiliation:
Center for Thin Film Devices, The Pennsylvania State University, University Park, PA 16802
Lihong Jiao
Affiliation:
Center for Thin Film Devices, The Pennsylvania State University, University Park, PA 16802
Randy Koval
Affiliation:
Center for Thin Film Devices, The Pennsylvania State University, University Park, PA 16802
Robert W. Collins
Affiliation:
Center for Thin Film Devices, The Pennsylvania State University, University Park, PA 16802
Christopher R. Wronski
Affiliation:
Center for Thin Film Devices, The Pennsylvania State University, University Park, PA 16802
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Abstract

Current-voltage, light I-V and internal quantum efficiency characteristics have been investigated in specular TCO/n+(a-Si:H)/i(a-Si:H)/Nickel Schottky barrier cell structures with protocrystalline intrinsic layers. The studies were carried out on structures with different thickness i layers after a degraded steady state had been reached with AMI.5 illumination at 27°C. These characteristics were modeled using the Analysis of Microelectronic and Photonic Structures(AMPS) and a gap state distribution, which includes charged defects, used in the analysis of results of detailed studies on thin films[1]. Fits are obtained to these characteristics for the different thickness cell structures using the same parameters as those used to fit the results on the corresponding intrinsic thin films. The results obtained from this study offer an approach to more reliable modeling of solar cells at their “end of life”.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 785
Copyright
Copyright © Materials Research Society 1999

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