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Characteristics of a-Si Pixel Arrays for Radiation Imaging

Published online by Cambridge University Press:  21 February 2011

I. Fujieda ,
S. Nelson ,
R. A. Street  and
R. L. Weisfield
I. Fujieda
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd. Palo Alto, CA 94304
S. Nelson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd. Palo Alto, CA 94304
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd. Palo Alto, CA 94304
R. L. Weisfield
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd. Palo Alto, CA 94304
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Abstract

Two-dimensional a-Si photodiode arrays with the a-Si TFT readout scheme were fabricated. Some performance characteristics were investigated for detecting visible light, X-ray and γ ray. Arrays of 64×40 1mm2-pixels have good uniformity with ± 1 % in linearity variation, ± 10 % dark current variation and ± 5 % sensitivity variation. The cross-talk between adjacent pixels was found to be negligible so that the intrinsic spatial resolution was determined entirely by the pixel size. Due to the high resistivity of a-Si photodiodes and TFTs, charges generated by pulsed light illumination were retained in photodiodes for a long period of time. This enables the accumulation-mode operation for detecting low-intensity light, where only one image is obtained over a long integration time. An encapsulated Co-57 source (3 μ.Ci) was successfully imaged with 5 sec integration. Alternatively, the array can be operated by the cine-mode for detecting high-intensity light, where a number of images are obtained successively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 537
Copyright
Copyright © Materials Research Society 1991

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References

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