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Characteristics in SiC-CMP using MnO2 slurry with Strong Oxidant under Different Atmospheric Conditions

Published online by Cambridge University Press:  18 July 2013

Syuhei Kurokawa ,
Toshiro Doi ,
Osamu Ohnishi ,
Tsutomu Yamazaki ,
Zhe Tan  and
Tao Yin
Syuhei Kurokawa
Affiliation:
Department of Mechanical Engineering, Faculty of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, JAPAN
Toshiro Doi
Affiliation:
Department of Mechanical Engineering, Faculty of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, JAPAN
Osamu Ohnishi
Affiliation:
Department of Mechanical Engineering, Faculty of Engineering, University of Miyazaki, 1-1, Gakuen Kibanadai-nishi, Miyazaki-shi, 889-2192, JAPAN
Tsutomu Yamazaki
Affiliation:
Department of Mechanical Engineering, Faculty of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, JAPAN
Zhe Tan
Affiliation:
Department of Mechanical Engineering, Graduate School of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, JAPAN
Tao Yin
Affiliation:
Department of Mechanical Engineering, Graduate School of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, JAPAN
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Abstract

Semiconductor technology is the key point of the information society. However, as technology developing, the traditional semiconductor material such as silicon (Si) could not meet the demand of the society. Therefore, the next generation semiconductor material silicon carbide (SiC) is widely concerned. Compared to Si, SiC has some superior physical and chemical properties. On the other hand, it is difficult to polish SiC wafers due to the chemical, mechanical, and thermal stability. To achieve high-efficient CMP processing of SiC substrates, oxygen gas was introduced which might increase removal rates. MnO2 slurry was selected instead of silica slurry and strong oxidant KMnO4 was used to improve SiC-CMP process as an additive. In this paper, the effect of oxidant was inspected first. Meanwhile, we carried out the CMP experiment with the new type CMP machine to control the processing atmospheres including types of gases and gas pressures. As conclusions, oxygen and high atmospheric pressure can increase the removal rate in MnO2 slurry. KMnO4 additive has a great effect on increase of the removal rate. One of additional interesting results is that there seems to be the optimum mixture ratio of N2 and O2 gases to achieve a higher removal rate of SiC wafer.

Keywords

CMPchemical reactionsemiconducting
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1560: Symposium BB – Evolutions in Planarization—Equipment, Materials, Techniques and Applications , 2013 , mrss13-1560-bb03-01
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Hattori, A.N. et al. ; Formation of wide and atomically flat graphene layers on ultraprecisionfigured 4H-SiC(0001) surfaces, Surface Science 605 (2011), p597–605.CrossRefGoogle Scholar
Canhua, L et al. ; Chemical mechanical polishing of silicon carbide, J. of Electro Mater 2004, P 481–486.Google Scholar
Cheung, ; Silicon carbide microelectromechanical systems for harsh environments, Imperial College Press, P3.Google Scholar
KishiiSadahiro, et al. ; Completely Planarized W Plugs using MnO2 CMP, Electron Devices Meeting, 1995., International, P465.Google Scholar
KishiiS, et al. ; Wide feature dielectric planarization using MnO2 slurry, 1996. Digest of Technical Papers. 1996 Symposium on, P74–75.Google Scholar
Doi, T. K., et al. , A new Bell-Jar Type Controlled Atmosphere Polishing (CAP) Machine and Its Characteristics, Journal of the JSPE, 70, 5, (2004), p.72.Google Scholar
Yong-Jin, Seo et al. ; Effects of different oxidizers on the W-C.P performance.Google Scholar
On-Line Monitoring of Hydrogen Peroxide in CMP Slurry; PacRim-CMP 2004 P211–221.Google Scholar
Tao, Yin et al. ; High Efficient Processing of Si and SiC Wafer by Atomosphere-Controlled CMP Machine, P18–20.Google Scholar
Kitamura, K., et al. , Basic Characteristics of a Simultaneous Double-side CMP Machine, Housed in a Sealed, Pressure-Resistance Container, Key Engineering Materials Vols. 447-448(2010), pp61–65.CrossRefGoogle Scholar
Akihisa, Kubota et al. .: Planarization of C-face 4H-SiC substrate using Fe particles and hydrogen peroxide solution, Precision Engineering 36(2012) p137–140.Google Scholar