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Characteristic Temperature Estimation for GaN-Based Lasers

Published online by Cambridge University Press:  15 February 2011

T. Honda ,
H. Kawanishi ,
T. Sakaguchi ,
F. Koyama  and
K. Iga
T. Honda
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665-1 Nakano-machi, Hachiohji-shi, Tokyo 192-0015, Japan, e-mail: [email protected] TEL:+81-426-22-9291 ext. 3440 FAX: +81-426-25-8982
H. Kawanishi
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665-1 Nakano-machi, Hachiohji-shi, Tokyo 192-0015, Japan, e-mail: [email protected] TEL:+81-426-22-9291 ext. 3440 FAX: +81-426-25-8982
T. Sakaguchi
Affiliation:
Department of Electronic Engineering, Kohgakuin University, 2665-1 Nakano-machi, Hachiohji-shi, Tokyo 192-0015, Japan, e-mail: [email protected] TEL:+81-426-22-9291 ext. 3440 FAX: +81-426-25-8982
F. Koyama
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
K. Iga
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Abstract

We have estimated the characteristic temperature T0 of GaN-based vertical-cavity surface-emitting lasers. The density matrix theory including intraband relaxation broadening has been taken into account. The estimated T0 is about 300 K, which suggests a good temperature characteristic in GaN-based lasers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.2
Copyright
Copyright © Materials Research Society 1999

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References

1. Maruska, H. P. and Tietjen, J. J.: Appl. Phys. Lett. 15, 327 (1969).Google Scholar
2. Akasaki, I., Amano, H., Sota, S., Sakai, H., Tanaka, T. and Koike, M.: Jpn. J. Appl. Phys. 34, L1517 (1995).Google Scholar
3. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y.: Jpn. J. Appl. Phys. 35, L74 (1996).Google Scholar
4. Praire, M. W. and Kolbas, R. M.: Superlattice and Microstructures 7, 269 (1990).Google Scholar
5. Wei, S. H. and Zunger, A.: Appl. Phys, Lett. 69, 2719 (1996).Google Scholar
6. Martin, G., Strite, S., Botchkarev, A., Agarwal, A., Rockett, A., Morkoç, H., Lambrecht, W. R. L. and Segall, B.: Appl. Phys. Lett. 65, 610 (1994).Google Scholar
7. Kroemer, H.: Surf. Sci. 174, 299 (1985).Google Scholar
8. Asada, M. and Suematsu, Y.: IEEE J. Quantum Electron. 21, 434 (1985).Google Scholar
9. Asada, M., Kameyama, A. and Suematsu, Y.: IEEE J. Quantum Electron. 20, 745 (1984).Google Scholar
10. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y. and Kiyoku, H.: Appl. Phys. Lett. 69, 1568 (1996).Google Scholar
11. Honda, T., Katsube, A., Sakaguchi, T., Koyama, F. and Iga, K.: Jpn. J. Appl. Phys. 34, 3527 (1995).Google Scholar
12. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y. and Kiyoku, H.: Jpn. J. Appl. Phys. 36, L1059 (1997).Google Scholar
13. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y.: 43rd Spring Meet. Jpn. Soc. Appl. Phys. & Related Soc., 29aZB-14, Asaka (1996).Google Scholar
14. Dutta, N. K.: J. Appl. Phys. 53, 7211 (1982).Google Scholar
15. Chong, T.-H. and Kishino, K.: IEEE J. Quantum Electron. 27, 1501 (1991).Google Scholar