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Characteristic Comparison Between Ge-on-Insulator (GOI) and SI-on-Insulator (SOI) Beam-Induced Crystallization Mechanism

Published online by Cambridge University Press:  28 February 2011

El-Hang Lee  and
M. Abdul Awal
El-Hang Lee
Affiliation:
AT&T Laboratories, Engineering Research Center, P.O. Box 900, Princeton, NJ 08540 U.S.A.
M. Abdul Awal
Affiliation:
AT&T Laboratories, Engineering Research Center, P.O. Box 900, Princeton, NJ 08540 U.S.A.
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Abstract

Characteristics of beam-recrystallized Si-on-insulator (SOT) and Ge-on-insulator (GOI) material systems are compared for the first time to gain complementary understanding of the crystallization mechanism that would benefit both systems. In general, GOI has been found to behave quite differently from SOI. In SOI, Si yields sub-boundaries; in GOI, Ge generates twinned or faceted crystals. In GOI, too, sub-boundary-like features were observed, but only occasionally in the midst of twinned crystals. Also observed in GOI was the phenomenon of seeded crystallization breakdown, where defect-free crystals from the seed abruptly turn into defect-laced crystals at a certain distance from the seed. This phenomenon is highly characteristic in SOI, but has never been reported for GOI. These findings are compared and discussed in light of the traditional understanding of crystal growth.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 577
Copyright
Copyright © Materials Research Society 1987

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References

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