Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T15:22:25.031Z Has data issue: false hasContentIssue false
  • English
  • Français

Channeling Studies of CeO2 and Ce1-xZrxO2 Films on Yttria-Stabilized ZrO2(111)

Published online by Cambridge University Press:  21 March 2011

V. Shutthanandan ,
S. Thevuthasan ,
Y. J. Kim  and
C.H.F. Peden
V. Shutthanandan
Affiliation:
Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA 99352, USA
S. Thevuthasan
Affiliation:
Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA 99352, USA
Y. J. Kim
Affiliation:
Department of Chemical Technology, Taejon National University of Technology, South Korea
C.H.F. Peden
Affiliation:
Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA 99352, USA
Get access

Abstract

Rutherford backscattering spectrometry and channeling techniques have been used to investigate the crystalline quality and interfacial properties of epitaxially grown CeO2 and Ce0.7Zr0.3O2 films on yttria-stabilized ZrO2(111) substrates. Both films appear to have high crystalline quality with minimum yield of Ce in the CeO2and Ce0.7Zr0.3O2 films determined to be 4.7% and 12.1% respectively. Visibility of more Ce atoms to the ion beam at the interface compared to the bulk of the film indicates that both films show significant disorder at the interface. The normalized angular yield curves obtained from Ce and Zr indicate that the Ce atomic rows in the CeO2 film are parallel to the Zr atomic rows in the substrates. Approximately 88% of the Zr atoms substitutionally occupy the Ce cation lattice sites in the Ce0.7Zr0.3O2 film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 654: Symposia AA – Structure-Property Relationships of Oxide Surfaces & Interfaces , 2000 , AA2.6.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

1. Fornasiero, P., Monte, R. Di., Rao, G. Raga, Kaspar, J., Meriani, S., Trovarelli, A., and Graziani, M., J. Catal. 151, 168 (1995).Google Scholar
2 Nishimura, T., Akasaka, Y., and Nakata, H., in Silicon-on-insulator: Its Technology and Application. Edited by Furukawa, S., KTK Scientific, Tokyo, Japan (1985) p. 263.Google Scholar
3. Kim, Y. J., Gao, Y., Herman, G.S., Thevuthasan, S., Jiang, W., McCready, D.E., and. Chambers, S.A., J. Vac. Sci. Technol. A 17(3), 926 (1999).Google Scholar
4. Gao, Y., Herman, G.S., Thevuthasan, S., Peden, C.H.F., and Chambers, S. A., J. Vac. Sci. Technol. A 17(3), 961 (1999).Google Scholar
5. Shutthanandan, V., Saleh, A.A, and Smith, R.J., Surf. Sci. 450, 204 (2000).Google Scholar
6. Material Analysis by Ion Channeling. Feldman, L. C., Mayer, J. W., and Picraux, S. T., Academic Press, New York (1982).Google Scholar
7. Kim, Y. J., Thevuthasan, S., and Peden, C.H.F., Surf. Sci. (to be submitted).Google Scholar
8. Thevuthasan, S., Peden, C.H.F., Engelhard, M.H., Baer, D.R., Herman, G.S., Jiang, W., Liang, Y., and Weber, W.J., Nucl. Instr. Meth. A 420, 81 (1999).Google Scholar
9. SIMNRA User's Guide. Edited by Mayer, M., Max-Plank-Institut fur Plasmaphysik, Germany (1997).Google Scholar
10. Handbook of Modern Ion beam Materials Analysis. Edited by, Tesmer, J.R. and Nastasi, M., Materials Research Society, Pittsburgh (1995).Google Scholar