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Channeling of Shallow Si Implants Into GaAs as a Function of Tilt and Rotation Angles

Published online by Cambridge University Press:  26 February 2011

Harold J. Hovel ,
T. E. McKoy ,
J. M. Mitcheli ,
G. Scilla ,
S. J. Moorea  and
F. Cardone
Harold J. Hovel
Affiliation:
IBM T.J. Watson Research Center, P.O.Box 218, Yorktown Heights, New York 10598
T. E. McKoy
Affiliation:
IBM T.J. Watson Research Center, P.O.Box 218, Yorktown Heights, New York 10598
J. M. Mitcheli
Affiliation:
IBM T.J. Watson Research Center, P.O.Box 218, Yorktown Heights, New York 10598
G. Scilla
Affiliation:
IBM T.J. Watson Research Center, P.O.Box 218, Yorktown Heights, New York 10598
F. Cardone
Affiliation:
IBM T.J. Watson Research Center, P.O.Box 218, Yorktown Heights, New York 10598
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Abstract

The effects of tilt and rotation angle on implant channeling are explored for Si implants into (100)-oriented GaAs substrates using Monte Carlo simulations, SIMS profiling, capacitance profiling, and Hall measurements. It is shown that the 7° tilt angle often used to prevent axial channeling is not large enough, and 11–13° angles are required to obtain the sharpest and most reproducible implant profiles. Rotation angles have a much smaller effect on the profiles as long as the beam incidence is kept away from the < 110 > direction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 439
Copyright
Copyright © Materials Research Society 1989

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References

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