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Channeling Effect in Boron and Boron Molecular Ion-Implantation

Published online by Cambridge University Press:  25 February 2011

N. Delfino  and
B.M. Paine
N. Delfino
Affiliation:
Philips Research Laboratories Sunnyvale, Signetics Corporation, Sunnyvale, CA 94088
B.M. Paine
Affiliation:
California Institute of Technology, Pasadena, CA 91125
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Abstract

The extent of boron channeled into interstitial and substitutional sites is measured for singly charged ions of B, BF, BCl, and BF2 implanted into <100> silicon. We find that the most deeply penetrating boron atoms ome to rest in interstiitial sites with the consequence that electrical junctions are always more shallow than etallurgical junctions. This result is essentially independent of ion mass, energy, and fluence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 529
Copyright
Copyright © Materials Research Society 1985

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References

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