Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-23T15:32:58.309Z Has data issue: false hasContentIssue false
  • English
  • Français

Channel Reliability in MOSFETs with Gate Oxide Grown using ECR Plasma of O2/He

Published online by Cambridge University Press:  01 February 2011

Vishwas Jaju  and
Vikram Dalal
Vishwas Jaju
Affiliation:
[email protected], Iowa State University, Electrical and Computer Engr., Coover Hall, Ames, IA, 50011, United States
Vikram Dalal
Affiliation:
[email protected], Iowa State University, Electrical and Computer Engr., Coover Hall, Ames, IA, 50011, United States
Get access

Abstract

In this paper we present the channel degradation properties of MOSFET with gate oxide grown using electron cyclotron resonance (ECR) plasma. Si was oxidized using ECR plasma of 10% O2/He at 450°C for 60 min. MOS and MOSFETs devices were fabricated, using ECR grown oxide as a gate oxide, to evaluate the electrical properties. We found that the n-MOSFET with ECR as-grown oxide shows poorer channel degradation properties, by approximately two orders of magnitude, compared to channel with thermally grown (at 950°C) dry oxide. When as-grown oxide was annealed at much higher temperature (~800oC), channel resistance for the hot carriers improved and became comparable to that of the thermally grown oxide. We have shown that because of the lower processing temperatures used during oxidation strain is present in the bulk oxide and also at Si-SiO2 interface. Annealing at higher temperature can relieve strain and this assumption was found be self consistent with the infrared absorption study.

Keywords

Sidielectricoxidation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A05-09
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Kimura, , Murakami, , Miyake, , Warabisako, , Sunami, and Tokuyama, , “Low Temperature Oxidation of Silicon in a Microwave-Discharged Oxygen Plasma,” J. Electrochem. Soc., Vol. 132, No. 6, 1460–1466 (June 1985).Google Scholar
2 Carl, D. A., Hess, D. W., and Liberman, M. A., “Oxidation of Silicon in an Electron Cyclotron Resonance Oxygen Plasma: Kinetics, Physiochemical, and Electrical Properties,” J. Vac. Sci. Technol. A 8, 2924–2930 (1990).Google Scholar
3 Salbert, G. T., Reinhard, D. K., and Asmussen, J., “Oxide Growth on Silicon Using a Microwave Electron Cyclotron Resonance Oxygen Plasma,” J. Vac. Sci. Technol. A 8, 2919–2923 (1990).Google Scholar
4 Kim, Keunjoo, An, M. H., Shin, Y. G., Suh, M. S., Youn, C. J., Lee, Y. H., Lee, K. B., and Lee, H. J., “Oxide Growth on Silicon (100) in the Plasma Phase of Dry Oxygen using an Electron Cyclotron Resonance Source,” J. Vac. Sci. Technol.B 14 (4), 2667- (1996).Google Scholar
5 Carl, D. A., Hess, D. W., Lieberman, M. A., Nguyen, T. D., and Gronsky, R., “Effects of dc Bias on the Kinetics and Electrical Properties of Silicon Dioxide Grown in an Electron Cyclotron Resonance Plasma,” J. Appl. Phys. 70, 3301–3313 (1991).Google Scholar
6 Joseph, J., Hu, Y. Z., and Irene, E. A., “A Kinetics Study of the Electron Cyclotron Resonance Plasma Oxidation of Silicon,” J. Vac. Sci. Technol. B 10, 611–617 (1992).Google Scholar
7 Sung, K. T., Pang, S. W., “Oxidation of Silicon in an Oxygen Plasma Generated by a Multipolar Electron Cyclotron Resonance Source,” J. Vac. Sci. Technol. B 10, 2211- (1992).Google Scholar
8 Saito, Kunio, Jin, Yoshito, Ono, Toshiro and Shimada, Masaru, “Low-Temperature SiliconOxidation with Very Small Activation Energy and High-Quality Interface by Electron Cyclotron Resonance Plasma Stream Irradiation,” Japanese Journal of Applied Physics, Vol. 43, No. 6B, pp. L765–L767 (2004).Google Scholar
9 Hess, D. W., “Plasma-assisted Oxidation, Anodization and Nitridation of Silicon,” IBM J. Res. Develop. Vol. 43, No.18, January/March. 1999.Google Scholar
10 Schroder, Dieter K., “Semiconductor Device and Materials Characterization,” John Willey, New York, (1990).Google Scholar
11JEDEC STANDARD, “Procedure for Measuring N-Channel MOSFET Hot-Carrier-Induced Degradation Under DC Stress,” JESD28-A.Google Scholar
12 Pilskin, W. A., Lehman, H. S.. “Structural Evolution of Silicon Oxide Films,” J. Electrochem. Soc., Vol. 18, No. 10, 1013–1019 (Oct. 1965).Google Scholar