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Changes in Optical Transmittance of Aluminum Nitride thin Films Exposed to Air

Published online by Cambridge University Press:  10 February 2011

Yoshifumi Sakuragi ,
Yoshihisa Watanabe ,
Yoshikazu Nakamura  and
Yoshiki Amamoto
Yoshifumi Sakuragi
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239, Japan
Yoshihisa Watanabe
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239, Japan
Yoshikazu Nakamura
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239, Japan
Yoshiki Amamoto
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239, Japan
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Abstract

Aluminum nitride (AlN) thin films have been synthesized by ion-beam assisted deposition method and the influence of air-exposure on the optical transmittance has been studied. The kinetic energy of nitrogen ion beam was kept at 0.1 or 1.5 keV under the constant current density. Synthesized films have been exposed to controlled air (23 °C and RH; 50%) and optical transmission spectrum from 190 to 2200 nm has been measured by UV-visible spectrometer every week. Surface morphology of the films has been observed with an optical microscope (OM). The optical transmittance has not changed drastically up to one year. Observations by OM show that round features of some microns were produced on the surface after about 25 weeks exposure. These substances seem to be reaction products between AlN and water in air.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 811
Copyright
Copyright © Materials Research Society 1997

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References

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