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Challenges for High Temperature Silicon Carbide Electronics

Published online by Cambridge University Press:  01 February 2011

C.-M. Zetterling ,
S.-M. Koo ,
E. Danielsson ,
W. Liu ,
S.-K. Lee ,
M. Domeij ,
H.-S. Lee  and
M. Ostling
C.-M. Zetterling
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, Electrum 229, S-164 40 Stockholm-Kista, Sweden
S.-M. Koo
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, Electrum 229, S-164 40 Stockholm-Kista, Sweden
E. Danielsson
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, Electrum 229, S-164 40 Stockholm-Kista, Sweden
W. Liu
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, Electrum 229, S-164 40 Stockholm-Kista, Sweden
S.-K. Lee
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, Electrum 229, S-164 40 Stockholm-Kista, Sweden
M. Domeij
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, Electrum 229, S-164 40 Stockholm-Kista, Sweden
H.-S. Lee
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, Electrum 229, S-164 40 Stockholm-Kista, Sweden
M. Ostling
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, Electrum 229, S-164 40 Stockholm-Kista, Sweden
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Abstract

Silicon carbide has been proposed as an excellent material for high-frequency, high-power and high-temperature electronics. High power and high frequency applications have been pursued for quite some time in SiC with a great deal of success in terms of demonstrated devices. However, self-heating problems due to the much higher power densities that result when ten times higher electrical fields are used inside the devices needs to be addressed. High-temperature electronics has not yet experienced as much attention and success, possibly because there is no immediate market. This paper will review some of the advances that have been made in high-temperature electronics using silicon carbide, starting from process technology, continuing with device design, and finishing with circuit examples. For process technology, one of the biggest obstacles is long-term stable contacts. Several device structures have been electrically characterized at high temperature (BJTs and FETs) and will be compared to surface temperature measurements and physical device simulation. Finally some proposed circuit topologies as well as novel solutions will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C1.4
Copyright
Copyright © Materials Research Society 2003

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References

1 Zetterling, C.-M., Process Technologies for Silicon Carbide Devices (EMIS Processing Series, INSPEC, IEE, London, UK, 2002) Google Scholar
2 Neudeck, P. G., Okojie, R. S., and Chen, L.-Y., Proceedings of the IEEE 90, 1065–76 (2002).Google Scholar
3 Singh, R., Irvine, K. G., Richmond, J. T., and Palmour, J. W., Materials Science Forum 389-393, 1265–8 (2002).Google Scholar
4 Tang, Y., Fedison, J. B., and Chow, T. P., Proc. IEEE/Cornell Conference on High Performance Devices, Piscataway, NJ, USA, 2000, p.178.Google Scholar
5 Zolper, J. C., Solid-State Electron. 42, 2153 (1998).Google Scholar
6 Maranowski, M.M. and Cooper, J.A., IEEE Trans. Electron Devices 46, 520 (1999).Google Scholar
7 Wang, X., and Ma, T.P., paper 8.7 in Technical Digest of International Electron Device Meeting, Washington DC., Dec. 5-8 (1999).Google Scholar
8 Lipkin, L. A. and Palmour, J. W., Mater. Sci. Forum 338-342, 1093 (2000).Google Scholar
9 Liu, S., Porrs, G., and Scofield, J., Mater. Sci. Forum 338-342, 1021 (2000).Google Scholar
10 Okojie, R. S., Lucko, D., and Spry, D., Proc. Electronic Materials Conf., Notre Dame, IN, June 2001, p.6.Google Scholar
11 Lee, S. K., Danielsson, E., Zetterling, C. M., Östling, M., Palmquist, J. P., Hogberg, H., and Jansson, U., Mat. Res. Soc. Proc. 622, T6.9.1 (2000).Google Scholar
12 Östling, M., Koo, S.-M., Lee, S.-K, Danielsson, E., Domeij, M., Zetterling, C.-M., Proc. 23rd International Conference on Microelectronics 1, 31 (2002).Google Scholar
13 Lee, S.-K., Uneus, L., Koo, S.-M., Zetterling, C.-M., Ekedahl, L.-G., Lundström, I., Spetz, A. Lloyd, and Östling, M., presented at TMS Electronic Materials Conference (EMC), 2002, Santa Barbara, USA.Google Scholar
14 Spetz, A. Lloyd, Tobias, P., Baranzahi, A., Mårtensson, P., and Lundström, I., IEEE Trans. Electron Devices 46, 561 (1999).Google Scholar
15 Marsh, S. P., IEEE Trans. Electron Devices 47, 288 (2000).Google Scholar
16 Liu, W., Danielsson, E., Zetterling, C.-M. and Östling, M., To appear in Mater. Sci. Forum.Google Scholar
17http://www.femlab.comGoogle Scholar
18 Koo, S.-M., Lee, S.-K., Zetterling, C.-M., Östling, M., Forsberg, U., and Janzen, E., Mater. Sci. Forum 389-393, 1235 (2002).Google Scholar
19 Scozzie, C. J., McLean, F. B., and McGarrity, J. M., J. Appl. Phys. 81, 7687 (1997).Google Scholar
20 Koo, S.-M., Domeij, M., Zetterling, C.-M., and Östling, M. In proceedings of Nordic Workshop on Power and Industrial Electronics, Stockholm, Sweden (2002).Google Scholar
21 Koo, S.-M., Zetterling, C.-M., Lee, H.-S., Östling, M., submitted to IEE Electronics Letters.Google Scholar
22 Koo, S.-M., Khartsev, S. I., Zetterling, C.-M., Grishin, A. M., and Östling, M., Appl. Phys. Lett. 81, 895, (2002).Google Scholar
23 Koo, S.-M., Khartsev, S. I., Zetterling, C.-M., Grishin, A. M., and Östling, M., in manuscript. Google Scholar
24 Koo, S.-M., Khartsev, S. I., Zetterling, C.-M., Grishin, A. M., and Östling, M., To be published in Mater. Res. Soc. Symp. Proc. Google Scholar