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Challenges for High Temperature Silicon Carbide Electronics

Published online by Cambridge University Press:  01 February 2011

C.-M. Zetterling ,
S.-M. Koo ,
E. Danielsson ,
W. Liu ,
S.-K. Lee ,
M. Domeij ,
H.-S. Lee  and
M. Ostling
C.-M. Zetterling
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, Electrum 229, S-164 40 Stockholm-Kista, Sweden
S.-M. Koo
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, Electrum 229, S-164 40 Stockholm-Kista, Sweden
E. Danielsson
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, Electrum 229, S-164 40 Stockholm-Kista, Sweden
W. Liu
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, Electrum 229, S-164 40 Stockholm-Kista, Sweden
S.-K. Lee
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, Electrum 229, S-164 40 Stockholm-Kista, Sweden
M. Domeij
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, Electrum 229, S-164 40 Stockholm-Kista, Sweden
H.-S. Lee
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, Electrum 229, S-164 40 Stockholm-Kista, Sweden
M. Ostling
Affiliation:
Department of Microelectronics and Information Technology, KTH, Royal Institute of Technology, Electrum 229, S-164 40 Stockholm-Kista, Sweden
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Abstract

Silicon carbide has been proposed as an excellent material for high-frequency, high-power and high-temperature electronics. High power and high frequency applications have been pursued for quite some time in SiC with a great deal of success in terms of demonstrated devices. However, self-heating problems due to the much higher power densities that result when ten times higher electrical fields are used inside the devices needs to be addressed. High-temperature electronics has not yet experienced as much attention and success, possibly because there is no immediate market. This paper will review some of the advances that have been made in high-temperature electronics using silicon carbide, starting from process technology, continuing with device design, and finishing with circuit examples. For process technology, one of the biggest obstacles is long-term stable contacts. Several device structures have been electrically characterized at high temperature (BJTs and FETs) and will be compared to surface temperature measurements and physical device simulation. Finally some proposed circuit topologies as well as novel solutions will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C1.4
Copyright
Copyright © Materials Research Society 2003

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