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The Challenge of GaAs Heterojunction Bipolar Transistor Integrated Circuit Technology.

Published online by Cambridge University Press:  26 February 2011

Han-Tzong Yuan
Han-Tzong Yuan*
Affiliation:
Central Research Laboratories, Texas Instruments Incorporated, Dallas, Texas 75265
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Abstract

The status and progress of AlGaAs/GaAs heterojunction bipolar transistor integrated circuits are reviewed. The challenge of fabricating large-scale integrated circuits using heterojunction bipolar transistors is discussed. Specifically, the issues related to low defect epitaxial materials, localized impurity doping techniques, simple and reliable ohmic contacts, and multilevel interconnects are examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 637
Copyright
Copyright © Materials Research Society 1989

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References

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