Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-27T01:48:36.831Z Has data issue: false hasContentIssue false
  • English
  • Français

CeO2 Thin Films as Buffer Layers for Si/YBCO Integrated Microelectronics

Published online by Cambridge University Press:  02 August 2011

Elena Tresso ,
V. Ballarini ,
A. Chiodoni ,
R. Gerbaldo ,
G. Ghigo ,
L. Gozzelino ,
E. Mezzetti ,
B. Minetti ,
C.F. Pirri  and
G. Tallarida
...Show all authors
Elena Tresso
Affiliation:
INFM-UdR ToPoli and Politecnico of Torino (Italy)
V. Ballarini
Affiliation:
INFM-UdR ToPoli and Politecnico of Torino (Italy)
A. Chiodoni
Affiliation:
INFM-UdR ToPoli and Politecnico of Torino (Italy)
R. Gerbaldo
Affiliation:
INFM-UdR ToPoli and Politecnico of Torino (Italy)
G. Ghigo
Affiliation:
INFM-UdR ToPoli and Politecnico of Torino (Italy)
L. Gozzelino
Affiliation:
INFM-UdR ToPoli and Politecnico of Torino (Italy)
E. Mezzetti
Affiliation:
INFM-UdR ToPoli and Politecnico of Torino (Italy)
B. Minetti
Affiliation:
INFM-UdR ToPoli and Politecnico of Torino (Italy)
C.F. Pirri
Affiliation:
INFM-UdR ToPoli and Politecnico of Torino (Italy)
G. Tallarida
Affiliation:
INFM-Laboratorio MDM (Italy)
S. Ferrari
Affiliation:
INFM-Laboratorio MDM (Italy)
C. Camerlingo
Affiliation:
C.N.R., Istituto di Cibernetica, Pozzuoli (Na), (Italy)
Get access

Abstract

The unique properties of superconductors such as radiation hardness and high microwave performances [1-3] make the integration with semiconductor conventional electronics a stimulating challenge. Many attempts have been tried to obtain good quality YBa2Cu3O7-x (YBCO) films on Si substrates, with the aim of taking advantage from the properties of both materials, but interdiffusion reactions and a poor lattice and thermal expansion coefficient matching require the use of a buffer layer at the semiconductor/superconductor interface. Yttria-stabilized zirconia (YSZ), Y2O3, MgO, SrTiO3, CeO2 and their combinations have been proposed and used as buffer layers in the case of Si/YBCO systems. In this paper we report on annealing treatments performed on Si/CeO2 bilayers. A set of optimized samples with deposition temperatures ranging from 100°C to 800°C has been radiatively heated at two different annealing temperatures, in N2 and O2 atmospheres. All the samples have been characterized by X-ray diffraction, Atomic Force Microscopy, micro-Raman spectroscopy. The preferential grain orientation, the lattice parameter, the crystals dimensions, the surface roughness have been studied. As a preliminary tentative, we report on YBCO film growth on the top of CeO2/Si optimized bi-layer before undergoing annealing treatment. This YBCO film resulted to be a-axis preferential oriented, with some contribution of c-axis oriented grains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 768: Symposium G – Integration of Heterogeneous Thin-Film Materials and Devices , 2003 , G3.9
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Civale, L. et al., Phys. Rev. Lett., vol 67, p. 648, 1991 Google Scholar
2. Hein, M.A., “Studies of high-temperature superconductors”, vol.18 ed. Narlikar, A. (New York: Nova), pp. 141–216 Google Scholar
3. Lancaster, M. J., “Passive microwave device applications of HTS”, Cambridge Univ. Press., Cambridge, U.K., 1997 Google Scholar
4. Morshed, A. H. et al., Appl. Phys. Lett., vol 70, p. 1647, 1997 Google Scholar
5. Hirai, T. et al., Jpn. J. Appl. Phys., vol 36, p. 5253, 1997 Google Scholar
6. Preisler, E. J. et al., J. Vac. Sci. Tech B, vol 19, p. 1611, 2001 Google Scholar
7. Ami, T. et al., Appl. Phys. Lett., vol 78, p. 1361, 2001 Google Scholar
8. Yoshimoto, M. et al., Jpn. J. Appl. Phys., vol 29, p. L1199, 1990 Google Scholar
9. Fork, D. K. et al., IEEE Trans. Appl. Supercond., vol 1, p. 67, 1991 Google Scholar
10. Phillips, J. M., J. Appl. Phys., vol 79, p. 1829, 1996 Google Scholar
11. Hollman, E.K. et al. Supercond. Sci. Techol. 7, 609, 1994 Google Scholar
12. Kim, L. et al., Thin Solid Film, vol 360, p. 155, 2000 Google Scholar
13. Chiodoni, A. et al., Intern. Journ. of Modern Physics, in pressGoogle Scholar
14. Chiodoni, A. et al., IEEE Transaction on Applied Superconductivity, in pressGoogle Scholar
15. Cullity, B.D., “Elements of X-ray diffraction”, Ed. Addison-Wesley Pub.Comp., Inc. (1998)Google Scholar
16. Whitfield, H. J. et al., J. Inorg. Nucl. Chem., vol 28, p. 2817, 1966 Google Scholar
17. Weber, W.H., Hass, K.C. and McBride, J.R., Phys. Rev. B 48, 178, 1993 Google Scholar
18. Graham, G.W. et al., J. Catalysis 130, 310, 1991 Google Scholar