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CdSe Thin Film Preparation by Unipolar Current Pulse Electrodeposition Technique

Published online by Cambridge University Press:  01 February 2011

Kiran Jain ,
N. Karar  and
H. Chandra
Kiran Jain
Affiliation:
Electronic Materials Division, National Physical Laboratory Dr. K.S.Krishnan Marg, New Delhi, India-110012
N. Karar
Affiliation:
Electronic Materials Division, National Physical Laboratory Dr. K.S.Krishnan Marg, New Delhi, India-110012
H. Chandra
Affiliation:
Electronic Materials Division, National Physical Laboratory Dr. K.S.Krishnan Marg, New Delhi, India-110012
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Abstract

CdSe thin films were prepared using unipolar current pulse electrodeposition technique on fluorine doped SnO2 coated glass plates. The electrodeposition bath consisted of aqueous solution including CdSO4, SeO2 and pH was adjusted using H2SO4. Growth of CdSe was accomplished under wide range of variables like current density, pulse on and off time in order to elucidate the effect on crystalline structure, grain size and optical properties. A low current density and increased off time favored grain orientation and crystallinity. Increased current density and on time favored grain size reduction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F14.35
Copyright
Copyright © Materials Research Society 2005

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