Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-25T04:21:48.642Z Has data issue: false hasContentIssue false
  • English
  • Français

CdSe Thin Film Preparation by Unipolar Current Pulse Electrodeposition Technique

Published online by Cambridge University Press:  01 February 2011

Kiran Jain ,
N. Karar  and
H. Chandra
Kiran Jain
Affiliation:
Electronic Materials Division, National Physical Laboratory Dr. K.S.Krishnan Marg, New Delhi, India-110012
N. Karar
Affiliation:
Electronic Materials Division, National Physical Laboratory Dr. K.S.Krishnan Marg, New Delhi, India-110012
H. Chandra
Affiliation:
Electronic Materials Division, National Physical Laboratory Dr. K.S.Krishnan Marg, New Delhi, India-110012
Get access

Abstract

CdSe thin films were prepared using unipolar current pulse electrodeposition technique on fluorine doped SnO2 coated glass plates. The electrodeposition bath consisted of aqueous solution including CdSO4, SeO2 and pH was adjusted using H2SO4. Growth of CdSe was accomplished under wide range of variables like current density, pulse on and off time in order to elucidate the effect on crystalline structure, grain size and optical properties. A low current density and increased off time favored grain orientation and crystallinity. Increased current density and on time favored grain size reduction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F14.35
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Licht, S., Peramunage, D., Nature, 345, 330 (1990)Google Scholar
2 El-Sherik, A.M., Erb, U., Page, J., Surface and Coating technology, 88, 70 (1996)Google Scholar
3 Nielsch, K., Muller, F., Li, A.P., Gosele, U., Adv. Mater. 12, 582 (2000)Google Scholar
4 Sharma, R.K., Jain, K., Balakrishnan, K.S., Rastogi, A.C., Physics of semiconductor devices, ed. Kumar, V. and Agarwal, S.K., (1998), pp 833 Google Scholar
5 Sharma, R.K., Jain, K., Balakrishnan, K.S., Rastogi, A.C., Bull. Elec. Chem, 14, 382 (1998)Google Scholar
6 Murali, K.R., Swaminathan, V., Trivedi, D.C., Solar energy materials and solar cells Google Scholar
7 Loizos, Z. and Spyrellis, N., Thin Solid Films, 204, 139 (1991)Google Scholar
8 Bouroushian, M., Loizos, Z., Spyrellis, N., Mourin, G., App. Surf. Sci. 115, 103 (1997)Google Scholar
9 Murray, C.B., Norris, D.J. and Bawendi, M.G., J.Am. Chem. Soc. 115, 8706 (1993)Google Scholar
10 Puippe, J. Cl and Ibl, N., J.Appl. Electrochem. 10, 775 (1980)Google Scholar
11 Ibl, N.. ClPuippe, J. and Angerer, H., Surface Tech. 6, 287 (1978) 287 Google Scholar