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Cause of the Decrease in Electromigration Resistance in Am/Al3Ti Lines

Published online by Cambridge University Press:  10 February 2011

A. Kameyama ,
K. Masuzaki ,
H. Okabayashi ,
T. Sakata  and
H. Mori
A. Kameyama
Affiliation:
Silicon Systems Res. Labs., NEC Corp., 34 Miyukigaoka, Tsukuba, Ibaraki 305–8501, JAPAN
K. Masuzaki
Affiliation:
Silicon Systems Res. Labs., NEC Corp., 34 Miyukigaoka, Tsukuba, Ibaraki 305–8501, JAPAN
H. Okabayashi
Affiliation:
Res. & Develop. Group, NEC Corp., 34 Miyukigaoka, Tsukuba, Ibaraki 305–8501, JAPAN
T. Sakata
Affiliation:
Res. Center for Ultra-High Voltage Electron Microscopy, Osaka Univ., Yamada-oka, Suita, Osaka 565–0871, JAPAN
H. Mori
Affiliation:
Res. Center for Ultra-High Voltage Electron Microscopy, Osaka Univ., Yamada-oka, Suita, Osaka 565–0871, JAPAN
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Abstract

To investigate the cause of the lower electromigration (EM) resistance in Al/Al3Ti lines compared to that in Al/TiN lines, we studied the Al microstructure and the EM characteristics. Even after fine-grained Al3Ti formation through a reaction of the Al and Ti, the Al microstructure of the unreacted Al on the AI3Ti remained a bamboo grain structure with a high 111 orientation. Thus, the Al grain structure and texture did not affect the EM resistance. The critical current density for voiding was 0.64 MA/cm2. The Al drift velocity in the Al/Al3Ti bamboo lines was two orders of magnitude higher than that for Al/TiN bamboo lines from 180°C to 280°C. This higher Al drift velocity decreased the EM resistance in the lines. The activation energy of Al drift in the AI/AI3Ti lines was 0.6 to 0.7 eV, which is lower than that for Al lattice diffusion. Thus, the Al lattice is not the dominant transport path in Al/Al3Ti lines. The dependence of the Al drift velocity on the line size showed that the Al/Al3Ti interface was the dominant path in the Al/Al3Ti bamboo lines. Thus, we concluded that the rapid Al transport through the Al/Al3Ti interface decreases EM resistance in Al/Al3Ti lines.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 563: Symposium M – Materials Reliability in Microelectronics IX , 1999 , 121
Copyright
Copyright © Materials Research Society 1999

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