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Cathodoluminescence Studies of Thermal Stress in Patterned GaAs/Si

Published online by Cambridge University Press:  25 February 2011

E. H. Lingunis ,
N. M. Haegel  and
N. H. Karam
E. H. Lingunis
Affiliation:
Dept. of Materials Science & Engineering, Univ. of California, Los Angeles, CA 90024
N. M. Haegel
Affiliation:
Dept. of Materials Science & Engineering, Univ. of California, Los Angeles, CA 90024
N. H. Karam
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
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Abstract

Thermal stress distributions in patterned GaAs/Si are studied by low temperature cathodoluminescence spectroscopy. The MOCVD-grown samples have ben patterned in the form of stripes either by selective etching or by selective GaAs/Si growth using a SiO2 mask. In this work, the relevant stress components are determined as functions of position for stripes with different width to thickness ratios from low temperature (10 K) GaAs cathodoluminescence spectra and the results are discussed in comparison with finite element elastic calculations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 351
Copyright
Copyright © Materials Research Society 1993

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References

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