Hostname: page-component-77c89778f8-9q27g Total loading time: 0 Render date: 2024-07-19T19:58:00.487Z Has data issue: false hasContentIssue false
  • English
  • Français

Cathodoluminescence Studies of Stacking Faults in a Quantum Well Structure

Published online by Cambridge University Press:  28 February 2011

S.J. Bailey  and
J.W. Steeds
S.J. Bailey
Affiliation:
Now at Materials Research Laboratory, University of Illinois, Urbana, IL 61801
J.W. Steeds
Affiliation:
H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol, BS8 lTL, UK
Get access

Abstract

A GaAs/AlxGal−xAs multiple quantum well structure was examined using low temperature (35K) cathodoluminescence in a transmission electron microscope. In this sample, stacking faults were found to occur in two different forms. The intensity of the dominant n=l(e-hh) luminescence was observed to decrease in the immediate vicinity of either form. In addition, stacking faults gave rise to several new emission features on the low energy side of the main peak. We discuss differences in cathodoluminescence spectra obtained from the two stacking fault configurations and present evidence to suggest that these features may be due to extrinsic luminescence from impurities associated with the stacking faults.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 503
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Roberts, S., Inst. Phys. Conf. Ser., 60, 317 (1981)Google Scholar
2. Booker, G.R., Discussions of the Faraday Society, 38, 298 (1964)Google Scholar
3. Tafto, J. and Spence, J.C.H., J. Appl. Cryst., 15, 60 (1982)Google Scholar
4. Kakibayashi, H., Nagata, F., Katayama, Y. and Shiraki, Y., Jap. J. Appl. Phys., 23, L846 (1984)Google Scholar
5. Chai, Y.G., Pao, Y.-C. and Hiert, T., Appl. Phys. Lett., 41, 1327 (1985)Google Scholar
6. Bailey, S.J., unpublished work.Google Scholar
7. Petroff, P.M., Logan, R.A. and Savage, A., J. of Microscopy, 118, 255 (1980)Google Scholar
8. Nanbu, K., Saito, J., Ishikawa, T., Kondo, K. and Shibatoni, A., J. Electrochem. Soc. 133, 601 (1986)Google Scholar
9. Kotani, T., Neda, O., Akita, K., Nishitani, Y., Kusonoki, T. and Ryuzan, O., J. Cryst. Growth, 38, 85 (1977)Google Scholar