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Cathodoluminescence of Praseodymium doped AlN, GaN and turbo static BN.

Published online by Cambridge University Press:  01 February 2011

Muhammad Maqbool ,
H. H. Richardson  and
M. E. Kordesch
Muhammad Maqbool
Affiliation:
Department of Physics & Astronomy, and Condensed Matter and Surface Sciences Program, Ohio University, Athens, OH 45701, USA.
H. H. Richardson
Affiliation:
Department of Physics & Astronomy, and Condensed Matter and Surface Sciences Program, Ohio University, Athens, OH 45701, USA.
M. E. Kordesch
Affiliation:
Department of Physics & Astronomy, and Condensed Matter and Surface Sciences Program, Ohio University, Athens, OH 45701, USA.
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Abstract

Praseodymium (Pr) doped aluminum nitride (AlN), gallium nitride (GaN) and boron nitride (BN) thin films deposited on Si (111) substrate are studied with cathodoluminescence. AlN:Pr and GaN:Pr films are deposited at 77 K and room temperature respectively while BN:Pr films at 750 K by reactive sputtering, using 100–200 Watts RF power, 5–10 mTorr nitrogen. Metal targets of Al and B with Pr and a liquid target of Ga with solid Pr are used. The dominant peaks observed in the visible range result from 3P0 → 3H4, 3P1→ 3H5, and 3P0 → 3F2 transitions in AlN:Pr, 3P0 → 3H4, 3P0 → 3H6, and 3P0 → 3F2 transitions in GaN:Pr and from 3P0 → 3H4, 3P1→ 3H5, 3P0 → 3H6, and 3P0 → 3F2 transitions in BN:Pr. Additional peaks are observed from AlN:Pr at 335 nm and 385 nm from 1S0 → 1D2 and 1S0 → 1I6 which are not observed in GaN:Pr and BN:Pr films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E8.12
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Caldwell, M. L., Martin, A. L., Dimitrova, V. I., Van Patten, P. G., Kordesch, M. E. and Richardson, H. H., Applied Physics Letters, Vol. 78, 1246–1248, (2001).Google Scholar
2. Vetter, Ulrich, Zenneck, Jan, and Hofsass, Hans, Applied Physics Lett. 83, 2145–2147 (2003).Google Scholar
3. Maqbool, Muhammad, Richardson, H.H., Van Patten, P.G. and Kordesch, M.E., Mat. Res. Soc. Symp. Proc. Vol. 798, 2004 Materials Research Society.Google Scholar
4. Martin, A. L., Spalding, C. M., Dimitrova, V. I., Van Patten, P. G., Caldwell, M. L., Kordesch, M.E. and Richardson, H. H., J. Vac. Sci. Technol. A 19, 1894–1897 (2001).Google Scholar
5. Steckl, A. J. and Birkhahn, R., Appl. Phys. Lett. 73, 1700 (1998).Google Scholar
6. Lozykowsky, H. J., Jadwisienczak, W. M. and Brown, I., Appl. Phys. Lett. 76, 861 (2000).Google Scholar
7. Suyver, J. F., Kik, P. G., Kimura, T., Polman, A., Franzo, G. and Coffa, S., Nucl. Instr. and Meth. in Phys. Res. B 148, 497–501 (1999).Google Scholar
8. Lozykowski, H. J., Phys. Rev. B 48, 17758 (1993).Google Scholar
9. Sokolov, V. I., SPIE Vol. 2706, 278 (1995).Google Scholar
10. Kim, S., Rhee, S. J., Tumbull, D. A., Li, X., Coleman, J. J., Bishop, S. G., and Klein, B., Appl. Phys. Lett. 71, 2662 (1997)Google Scholar
11. Lozykowski, H. J., Jadwisienczak, W. M., and Brown, I., Appl. Phys. Lett. 74, 1129 (1999).Google Scholar
12. Properties of Advanced Semiconductor Materials, GaN, AlN, InN, BN, SiC, SiGe, edited by Levinshtein, M., Rumyantsev, S. and Shur, M. (Wiley, New York, 2001).Google Scholar
13. Ramos-Brito, F., Garcia-Hipolito, M., Martinez-Martinez, R., Martinez-Sanchez, E. and Falcony, C., J. Phys. D: Appl. Phys. 37, L13–L16 (2004).Google Scholar
14. Bungenstock, C., Troster, T., Holzapfel, W. B., Fini, L. and Santoro, M., J. Phys. Condens. Matter 12, 6959–6969 (2000).Google Scholar
15. Birkhahn, R., Garter, M., and Steckl, A. J., Appl. Phys. Lett. 74, 2161–2163 (1999).Google Scholar
16. Zavada, J. M., Mair, R. A., Ellis, C. J., Lin, J. Y., Jiang, H. X., Wilson, R. G., Grudowski, P. A. and Dupuis, R. D., Appl. Phys. Lett., 75, 790–792 (1999).Google Scholar
17. Thiel, C. W., Cruquel, H., Wu, H., Sun, Y., Laypeyre, G. J., Cone, R. L., Equall, R. W., and Macfarlane, R. M., Physical Review B 64, 085107 (2001).Google Scholar
18. Van der Kolk, E., Dorenbos, P. and Van Eijk, C.W.E., Optics Communications 197, 317–326 (2001).Google Scholar
19. Liu, Q. L., Xu, F. F., and Tanaka, T., Appl. Phys. Lett., 81, 3948 (2002).Google Scholar
20. Allen, Steven, Kordesch, Martin E., Luminescence of transition metal ions in BN thin films, Unpublished proceeding of MRS spring 2001 meeting symposium GG. ID# UMRI 19.Google Scholar