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Cathodoluminescence, Electroluminescence, and Degradation of ZnCdSe Quantum Well Light Emitting Diodes

Published online by Cambridge University Press:  01 February 2011

A. Yu. Nikiforov ,
G. S. Cargill III ,
S. P. Guo ,
M. C. Tamargo  and
Y.-C. Chen
A. Yu. Nikiforov
Affiliation:
Department of Materials Science and Engineering, Lehigh Univ., Bethlehem, PA 18015, U.S.A.
G. S. Cargill III
Affiliation:
Department of Materials Science and Engineering, Lehigh Univ., Bethlehem, PA 18015, U.S.A.
S. P. Guo
Affiliation:
Department of Chemistry, City College-CUNY, New York, NY 10031, U.S.A. present address: EMCORE Corp., Somerset, NJ 08873, U.S.A.
M. C. Tamargo
Affiliation:
Department of Chemistry, City College-CUNY, New York, NY 10031, U.S.A.
Y.-C. Chen
Affiliation:
Department of Physics, Hunter College, CUNY, New York, NY 10021, U.S.A.
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Abstract

We have studied luminescence and degradation of a ZnCdMgSe/ZnCdSe/ZnCdMgSe QW LED grown by MBE and lattice matched to its InP substrate. Results have been obtained from time-resolved and bias-dependent cathodoluminescence spectroscopy and from electroluminescence spectroscopy. Reversible and irreversible variations in luminescence intensity were observed during bias cycling and electron bombardment. Cathodoluminescence from the QW LED was modeled by calculating current generation and transport, bias-dependent energy levels, envelope wave functions, overlap integrals, and carrier escape rates. Results of these calculations agree qualitatively, but not quantitatively, with bias-dependent intensity and wavelength changes observed in the experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C3.18
Copyright
Copyright © Materials Research Society 2003

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References

1. Guo, S. P. and Tamargo, M. C. in II-VI Semiconductor Materials and Their Applications, 2002 edited by Tamargo, Maria C., (Taylor & Francis, New York, 2002), pp.261.Google Scholar
2. Faschinger, W. and Nürnberger, J., Appl. Phys. Lett. 77, 187 (2000).Google Scholar
3. Albert, D., Nurnberger, J., Hock, V., Ehinger, M., Faschinger, W., and Landwehr, G., Appl. Phys. Lett. 74, 1957 (1999).Google Scholar
4. Gundel, S., Albert, D., Nurnberger, J., and Faschinger, W., Phys. Rev. B 60, R16271 (1999); J. Cryst. Growth 214/215, 474 (2000).Google Scholar
5. Sze, S. M., Physics of Semiconductor Devices, (Wiley, New York, 1981), pp. 82.Google Scholar
6. Nikiforov, A. Yu., Cargill, G. S. III, Tamargo, M. C., Guo, S. P., Chen, Y.- C., Mat. Res. Soc. Symp. Proc. 692, H9.26.1 (2001).Google Scholar
7. Schneider, H. and Klitzing, K. von, Phys. Rev. B 38, 6160 (1988).Google Scholar
8. Mendez, E. E., Bastard, G., Chang, L. L., Esaki, L., Morkoc, H., and Fischer, R., Phys. Rev. B 26, 7101 (1982).Google Scholar
9. Nikiforov, A. Y., Cathodoluminescence From II-VI Quantum Wells, Ph.D. Dissertation, Lehigh University, 2003.Google Scholar
10. Chen, Y.-C., private communication, 2003.Google Scholar