Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T01:46:39.234Z Has data issue: false hasContentIssue false
  • English
  • Français

CAT-CVD Process and its Application to Preparation of Si-Based Thin Films

Published online by Cambridge University Press:  15 February 2011

Hideki Matsumura ,
Atsushi Masuda  and
Akira Izumi
Hideki Matsumura
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa 923-1292, Japan, TEL (+81)-761-51-1560, FAX (+81)-761-51-1149, E-mail;, [email protected]
Atsushi Masuda
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa 923-1292, Japan, TEL (+81)-761-51-1560, FAX (+81)-761-51-1149
Akira Izumi
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa 923-1292, Japan, TEL (+81)-761-51-1560, FAX (+81)-761-51-1149
Get access

Abstract

This is to review the present understanding on Cat-CVD (catalytic chemical vapor deposition) or hot wire CVD. Firstly, the deposition mechanism in Cat-CVD process is briefly mentioned along with key issues such as the effect of heat radiation and a method to avoid contamination from the catalyzer. Secondly, the properties of Cat-CVD Si-based thin films such as amorphous silicon (a-Si), polycrystalline silicon (poly-Si) and silicon nitride (SiNx) films are demonstrated, and finally, the feasibility of such films for industrial application is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 67
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Matsumura, H., Ihara, H. and Tachibana, H., Proc. 18th IEEE Photovoltaic Specialists Conf., Las Vegas, 1985 (IEEE, New York, 1985), p. 1277.Google Scholar
2. Wiesmann, H., Ghosh, A. K., McMahon, T. and Strongin, M., J. Appl. Phys. 50, 3752 (1979).Google Scholar
3. Matsumura, H., Jpn. J. Appl. Phys. 25, L949 (1986).Google Scholar
4. Matsumura, H., Appl. Phys. Lett. 51, 804 (1987).Google Scholar
5. Matsumura, H., J. Appl. Phys. 66, 3612 (1989).Google Scholar
6. Matsumura, H., Jpn. J. Appl. Phys. 30, L1522 (1991).Google Scholar
7. Mahan, A. H., Carapella, J., Nelson, B. P., Crandall, R. S. and Balberg, I., J. Appl. Phys. 69, 6728 (1991).Google Scholar
8. Bauer, S., Herbst, W., Schroder, B. and Oechsner, H., Conf. Record 26th IEEE Photovoltaic Specialists Conf. -1997, Anaheim, 1997 (IEEE, New York, 1997) p. 719.Google Scholar
9. Meiling, H., Brockhoff, A. M., Rath, J. K. and Schropp, R. E. I., Mater. Res. Soc. Symp. Proc. 507, (1998) (in press).Google Scholar
10. Matsumura, H., Mimura, K. and Makino, H., Dig. of Tech. Papers of 1995 Int. Workshop on Active-Matrix Liquid-Crystal Displays, Osaka, 1995 (Business Center for Academic Societies Japan, Tokyo, 1995) p. 89.Google Scholar
11. Brogueira, P., Conde, J. P., Arekat, S. and Chu, V., J. Appl. Phys. 79, 8748 (1996).Google Scholar
12. Heintze, M., Zedlitz, R., Wanka, H. N. and Schubert, M. B., J. Appl. Phys. 79, 2699 (1996).Google Scholar
13. Horbach, C., Beyer, W. and Wagner, H., J. Non-Cryst. Solids 137&138, 661 (1991).Google Scholar
14. Horbach, C., Beyer, W. and Wagner, H., J. Non-Cryst. Solids 114, 187 (1989).Google Scholar
15. Ehrlich, G., Adv. Catal. 14, 255 (1963).Google Scholar
16. Sault, A. G. and Goodman, D. W., Surf. Sci. 235, 28 (1990).Google Scholar
17. Scott, B. A., Semiconductors and Semimetals (Academic Press, Inc., 1984) Vol. 21A, Chap. 7, p. 123.Google Scholar
18. Doyle, J., Robertson, R., Lin, G. H., He, M. Z. and Gallagher, A., J. Appl. Phys. 64, 3215 (1988).Google Scholar
19. Ichikawa, M., Takeshita, J., Yamada, A. and Konagai, M., Jpn. J. Appl. Phys. 38, L24 (1999).Google Scholar
20. Matsumura, H., Dig. of Tech. Papers of Society for Information Display Int. Symp., Vol. 29, Anaheim, 1998 (Society for Information Display, Santa Ana, 1998) p. 1189.Google Scholar
21. Hattori, R., Nakamura, G., Nomura, S., Ichise, T., Masuda, A. and Matsumura, H., Tech. Dig. of 19th IEEE Gallium Arsenide Integrated Circuit Symp., Anaheim, 1997, p. 78.Google Scholar
22. Sato, H., Izumi, A. and Matsumura, H., Abst. Mater. Res. Soc. 1999 Spring Meeting, Symposium R, Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics, San Francisco, 1999, R. 6.13.Google Scholar